In the last few years the research efforts have been addressed to relaxed Si1-xGex buffer layers on Si substrate reported to as 'virtual substrates'. This paper focuses on the relaxation mechanism of Si1-xGex/Si(1 0 0) heterostructures grown by solid source molecular beam epitaxy. On this purpose. we have grown samples with different Ge concentrations (0.035 <x <0.34) and thicknesses (32-475 nm). By comparing unrelaxed samples grown at 350 degreesC, 450 degreesC and 550 degreesC and processed with isochronal post-growth thermal annealing, we found a subsequent higher dislocation density in the low growth temperature samples, caused by the thermal treatment. We attribute this peculiar behaviour to the interaction between point defects and dislocations which promotes the climb mechanism of dislocation dynamics and which reduces the activation energy for the relaxation. (C) 2001 Elsevier Science B.V. All rights reserved. RI Mirabella, Salvo/E-4672-2010

Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy

MIRABELLA, SALVATORE;TERRASI, Antonio;PRIOLO, Francesco;
2001-01-01

Abstract

In the last few years the research efforts have been addressed to relaxed Si1-xGex buffer layers on Si substrate reported to as 'virtual substrates'. This paper focuses on the relaxation mechanism of Si1-xGex/Si(1 0 0) heterostructures grown by solid source molecular beam epitaxy. On this purpose. we have grown samples with different Ge concentrations (0.035
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/38681
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