The As precipitation occurring during thermal oxidation of As implanted Si crystals has been studied by extended x-ray absorption fine structure measurements. (100) Si wafers, implanted with 3 X 10(15)/cm(2) and 3 X 10(16)/cm(2) As+ ions at an energy of 70 keV, were oxidized either in H2O ambient (wet) at 920 degrees C or O-2 (dry) at 1100 degrees C. Precipitation of monoclinic SiAs occurs at the SiO2/Si interface for low temperature oxidation processes. In the case of 3 X 10(16) As/cm(2), about 90% of the As forms SiAs precipitates, while for the lower dose a mixing of precipitates and As in substitutional-like sites is observed. On the other hand, when the high temperature oxidation is performed, most of the As (up to 90% for the 3 X 10(15) As/cm(2) sample) is found in a substitutional-like configuration. (C) 1998 American Institute of Physics. [S0003-6951(98)02644-8] RI Raineri, Vito/C-5307-2009; La Via, Francesco/E-8035-2011
Precipitation of As in thermally oxidized ion-implanted Si crystals
TERRASI, Antonio;
1998-01-01
Abstract
The As precipitation occurring during thermal oxidation of As implanted Si crystals has been studied by extended x-ray absorption fine structure measurements. (100) Si wafers, implanted with 3 X 10(15)/cm(2) and 3 X 10(16)/cm(2) As+ ions at an energy of 70 keV, were oxidized either in H2O ambient (wet) at 920 degrees C or O-2 (dry) at 1100 degrees C. Precipitation of monoclinic SiAs occurs at the SiO2/Si interface for low temperature oxidation processes. In the case of 3 X 10(16) As/cm(2), about 90% of the As forms SiAs precipitates, while for the lower dose a mixing of precipitates and As in substitutional-like sites is observed. On the other hand, when the high temperature oxidation is performed, most of the As (up to 90% for the 3 X 10(15) As/cm(2) sample) is found in a substitutional-like configuration. (C) 1998 American Institute of Physics. [S0003-6951(98)02644-8] RI Raineri, Vito/C-5307-2009; La Via, Francesco/E-8035-2011I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
