Semiconducting beta-FeSi2 layers, approximately 130 nm thick, have been grown by deposition of Fe onto [001] single crystal Si kept at high temperature with concurrent low energy Ar+ beam bombardment. Ions with energies of 100, 200 and 300 eV, and current density of a few muA/cm2 have been used. Scanning electron microscopy and transmission electron microscopy analyses show an improvement of the surface morphology and strong enhancement of the epitaxial fraction with respect to a film grown without ion beam assistance. In particular the gradual densification of the film is observed when the ion energy or current is increased.
SURFACE-MORPHOLOGY AND EPITAXY OF BETA-FESI2 OBTAINED BY ION-BEAM-ASSISTED GROWTH
TERRASI, Antonio;
1993-01-01
Abstract
Semiconducting beta-FeSi2 layers, approximately 130 nm thick, have been grown by deposition of Fe onto [001] single crystal Si kept at high temperature with concurrent low energy Ar+ beam bombardment. Ions with energies of 100, 200 and 300 eV, and current density of a few muA/cm2 have been used. Scanning electron microscopy and transmission electron microscopy analyses show an improvement of the surface morphology and strong enhancement of the epitaxial fraction with respect to a film grown without ion beam assistance. In particular the gradual densification of the film is observed when the ion energy or current is increased.File in questo prodotto:
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