In this work the interface between transition metals (Fe, Co) and Si has been investigated by soft X-ray photoemission spectroscopy. Synchrotron radiation has been used as photon source, measuring valence bands, Si2p and metal 3p core levels with high surface sensitivity. CoSi2 and beta-FeSi2 chemical phases have been obtained by thermal annealing (500-800-degrees-C) of thin films deposited onto room temperature Si<111> and <100> oriented wafers. Moreover, for the first time to our knowledge, a mixed (Fe0.785-Co0.25)/Si multilayered interface has been studied, showing remarkable differences with respect to single-metal deposition. RI Margaritondo, Giorgio/B-1367-2008

PHOTOEMISSION BY SYNCHROTRON RADIATION FROM FE/SI, CO/SI AND (FE-CO)/SI INTERFACES

TERRASI, Antonio;
1992

Abstract

In this work the interface between transition metals (Fe, Co) and Si has been investigated by soft X-ray photoemission spectroscopy. Synchrotron radiation has been used as photon source, measuring valence bands, Si2p and metal 3p core levels with high surface sensitivity. CoSi2 and beta-FeSi2 chemical phases have been obtained by thermal annealing (500-800-degrees-C) of thin films deposited onto room temperature Si<111> and <100> oriented wafers. Moreover, for the first time to our knowledge, a mixed (Fe0.785-Co0.25)/Si multilayered interface has been studied, showing remarkable differences with respect to single-metal deposition. RI Margaritondo, Giorgio/B-1367-2008
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/42222
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