PHOTOEMISSION BY SYNCHROTRON RADIATION FROM FE/SI, CO/SI AND (FE-CO)/SI INTERFACES

TERRASI, Antonio; CAMPISANO, SU; RIMINI, E; HWU, Y; MARGARITONDO, G.

doi:10.1016/0169-4332(92)90291-5

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In this work the interface between transition metals (Fe, Co) and Si has been investigated by soft X-ray photoemission spectroscopy. Synchrotron radiation has been used as photon source, measuring valence bands, Si2p and metal 3p core levels with high surface sensitivity. CoSi2 and beta-FeSi2 chemical phases have been obtained by thermal annealing (500-800-degrees-C) of thin films deposited onto room temperature Si<111> and <100> oriented wafers. Moreover, for the first time to our knowledge, a mixed (Fe0.785-Co0.25)/Si multilayered interface has been studied, showing remarkable differences with respect to single-metal deposition. RI Margaritondo, Giorgio/B-1367-2008

Titolo:	PHOTOEMISSION BY SYNCHROTRON RADIATION FROM FE/SI, CO/SI AND (FE-CO)/SI INTERFACES
Autori interni:	TERRASI, Antonio CAMPISANO SU RIMINI E HWU Y MARGARITONDO G. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	1992
Rivista:	APPLIED SURFACE SCIENCE
Abstract:	In this work the interface between transition metals (Fe, Co) and Si has been investigated by soft X-ray photoemission spectroscopy. Synchrotron radiation has been used as photon source, measuring valence bands, Si2p and metal 3p core levels with high surface sensitivity. CoSi2 and beta-FeSi2 chemical phases have been obtained by thermal annealing (500-800-degrees-C) of thin films deposited onto room temperature Si<111> and <100> oriented wafers. Moreover, for the first time to our knowledge, a mixed (Fe0.785-Co0.25)/Si multilayered interface has been studied, showing remarkable differences with respect to single-metal deposition. RI Margaritondo, Giorgio/B-1367-2008
Handle:	http://hdl.handle.net/20.500.11769/42222
Appare nelle tipologie:	1.1 Articolo in rivista

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