The technological implementation of STT-magnetic random-access memory (MRAM) in real devices needs a complete description of the statistical switching behavior at room temperature. In this paper, we investigate, by means of a full micromagnetic model, the effect of the interfacial Dzyaloshinskii–Moriya interaction (IDMI) on the critical current density and probability density function (PDF) of the switching time in perpendicular STT-MRAMs. We show that for large enough values of the symmetric exchange interaction, the negative effect of the IDMI on the critical current is strongly reduced. In addition, a comprehensive analysis of the four main statistical moments (mean, standard deviation, skewness, and kurtosis) points out that to fit the switching time PDF in order to maintain a quadratic error at least one order of magnitude smaller than skew normal PDF, a Pearson type IV PDF has to be used also in presence of the IDMI.

Micromagnetic analysis of statistical switching in perpendicular STT-MRAM with interfacial Dzyaloshinskii-Moriya Interaction

SIRACUSANO, GIULIO;LA CORTE, Aurelio;
2017

Abstract

The technological implementation of STT-magnetic random-access memory (MRAM) in real devices needs a complete description of the statistical switching behavior at room temperature. In this paper, we investigate, by means of a full micromagnetic model, the effect of the interfacial Dzyaloshinskii–Moriya interaction (IDMI) on the critical current density and probability density function (PDF) of the switching time in perpendicular STT-MRAMs. We show that for large enough values of the symmetric exchange interaction, the negative effect of the IDMI on the critical current is strongly reduced. In addition, a comprehensive analysis of the four main statistical moments (mean, standard deviation, skewness, and kurtosis) points out that to fit the switching time PDF in order to maintain a quadratic error at least one order of magnitude smaller than skew normal PDF, a Pearson type IV PDF has to be used also in presence of the IDMI.
Dzyaloshinskii–Moriya interaction, kurtosis, skewness, spin-transfer torque (STT), STT-magnetic random-access memory (MRAM), write error rate (WER)
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/43731
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