In this work, we discuss how the insertion of a LaSiOx layer in between an in-house IL passivation layer and the high-k has moved the III-V gate stack into the target window for future technology nodes. The insertion of this LaSiOx layer in the gate stack has reduced the Dit and Nbt below the target level of 5x1011/eV.cm2 and 3x1010/cm2 (target at 10 years operation: ΔVfb<30mV at 125°C) respectively. From physical analysis, it was found that LaSiOx can stabilize the interaction of the IL layer with the InGaAs substrate. An implant free In0.53Ga0.47As n-MOSFET was fabricated with this gate stack and for the first time, a III-V gate stack meets the reliability target for advanced technology nodes with a max operating Vov of 0.6 V. In addition, an excellent electron mobility (µeffpeak=3531 cm2/V-s), low SSlin=71 mV/dec and an EOT of 1.15 nm were obtained. We also report the scaling potential of this stack to 1 nm EOT without any loss in performance, reliability and further reduction of the sub-threshold swing (SSlin=68 mV/dec). © Advances in Science, Technology and Engineering Systems. All rights reserved.
On the development of a reliable gate stack for future technology nodes based on III-V materials
Spampinato, V.;
2018-01-01
Abstract
In this work, we discuss how the insertion of a LaSiOx layer in between an in-house IL passivation layer and the high-k has moved the III-V gate stack into the target window for future technology nodes. The insertion of this LaSiOx layer in the gate stack has reduced the Dit and Nbt below the target level of 5x1011/eV.cm2 and 3x1010/cm2 (target at 10 years operation: ΔVfb<30mV at 125°C) respectively. From physical analysis, it was found that LaSiOx can stabilize the interaction of the IL layer with the InGaAs substrate. An implant free In0.53Ga0.47As n-MOSFET was fabricated with this gate stack and for the first time, a III-V gate stack meets the reliability target for advanced technology nodes with a max operating Vov of 0.6 V. In addition, an excellent electron mobility (µeffpeak=3531 cm2/V-s), low SSlin=71 mV/dec and an EOT of 1.15 nm were obtained. We also report the scaling potential of this stack to 1 nm EOT without any loss in performance, reliability and further reduction of the sub-threshold swing (SSlin=68 mV/dec). © Advances in Science, Technology and Engineering Systems. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
