Hafnium zirconate (HZO) is investigated in metal–ferroelectric–metal capacitors as a function of Hf/(Hf+Zr) atomic ratio, the presence of a thin ZrO2 seed layer, and/or by doping HZO with La3+. It is demonstrated that a longer endurance is achieved with Hf-rich HZO by introducing a ZrO2 seed layer. The endurance is further improved by introducing La3+ in the Hf-rich HZO layer of the bilayer stack, which offers a higher 2Pr in the pristine state compared with a stoichiometric HZO doped with the same amount of La3+. Both ZrO2 underlayer and La3+ doping of HZO are shown to play a decisive role in promoting the formation of an orthorhombic and tetragonal phase at the expense of a detrimental monoclinic phase. © 2021 Wiley-VCH GmbH

Ferroelectric La-Doped ZrO2/HfxZr1−xO2 Bilayer Stacks with Enhanced Endurance

Spampinato, V.;
2021-01-01

Abstract

Hafnium zirconate (HZO) is investigated in metal–ferroelectric–metal capacitors as a function of Hf/(Hf+Zr) atomic ratio, the presence of a thin ZrO2 seed layer, and/or by doping HZO with La3+. It is demonstrated that a longer endurance is achieved with Hf-rich HZO by introducing a ZrO2 seed layer. The endurance is further improved by introducing La3+ in the Hf-rich HZO layer of the bilayer stack, which offers a higher 2Pr in the pristine state compared with a stoichiometric HZO doped with the same amount of La3+. Both ZrO2 underlayer and La3+ doping of HZO are shown to play a decisive role in promoting the formation of an orthorhombic and tetragonal phase at the expense of a detrimental monoclinic phase. © 2021 Wiley-VCH GmbH
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/559903
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 15
  • ???jsp.display-item.citation.isi??? 12
social impact