The conduction mechanism in Si/SiO2/PrxSi yOz/Pr2O3 stack deposited by Metal-Organic Chemical Vapour Deposition (MOCVD) has been investigated and correlated to the electrical defects by performing current density-voltage (J-V) measurements at several temperatures (from 100°C to 200°C). The Hill's diagram indicated that at high electric fields the conduction follows the Poole-Frenkel mechanism. Nanoscopic and microscopic properties have been correlated by comparison between capacitance voltage (C-V) measurements on large area MOS devices and measurements carried out at nanometer scale by scanning capacitance microscopy (SCM). A trap density of 4.77×1011 cm-2 was measured independently of the scale dimension. Finally, the energy levels contributing to the conduction phenomena were determined to be located at the midgap.
Current transport by defects in Pr2O3 high k films
Fiorenza P.;Raineri V.;Malandrino G.;
2005-01-01
Abstract
The conduction mechanism in Si/SiO2/PrxSi yOz/Pr2O3 stack deposited by Metal-Organic Chemical Vapour Deposition (MOCVD) has been investigated and correlated to the electrical defects by performing current density-voltage (J-V) measurements at several temperatures (from 100°C to 200°C). The Hill's diagram indicated that at high electric fields the conduction follows the Poole-Frenkel mechanism. Nanoscopic and microscopic properties have been correlated by comparison between capacitance voltage (C-V) measurements on large area MOS devices and measurements carried out at nanometer scale by scanning capacitance microscopy (SCM). A trap density of 4.77×1011 cm-2 was measured independently of the scale dimension. Finally, the energy levels contributing to the conduction phenomena were determined to be located at the midgap.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
