ROCCAFORTE, FABRIZIO
 Distribuzione geografica
Continente #
NA - Nord America 360
EU - Europa 180
AS - Asia 94
SA - Sud America 25
AF - Africa 14
Totale 673
Nazione #
US - Stati Uniti d'America 305
SG - Singapore 64
DE - Germania 59
CA - Canada 54
IT - Italia 45
IE - Irlanda 30
CN - Cina 24
BR - Brasile 22
UA - Ucraina 17
BE - Belgio 7
CI - Costa d'Avorio 6
RU - Federazione Russa 5
SN - Senegal 5
AT - Austria 3
FI - Finlandia 3
FR - Francia 3
CO - Colombia 2
GB - Regno Unito 2
NL - Olanda 2
AO - Angola 1
AR - Argentina 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
HK - Hong Kong 1
IQ - Iraq 1
JO - Giordania 1
LB - Libano 1
MA - Marocco 1
MX - Messico 1
PL - Polonia 1
SE - Svezia 1
TR - Turchia 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 673
Città #
Chandler 68
Santa Clara 66
Toronto 52
Singapore 38
Dublin 30
Chicago 27
Jacksonville 20
Boardman 17
Civitanova Marche 12
Nanjing 9
Andover 7
Bremen 7
Brussels 7
Cambridge 7
Council Bluffs 7
Lawrence 7
Abidjan 6
Ashburn 5
Catania 5
Dakar 5
Des Moines 5
Turin 5
Comiso 4
Milan 3
Nanchang 3
Rome 3
Ann Arbor 2
Assago 2
Bogotá 2
Helsinki 2
Jinan 2
Liberty Lake 2
Los Angeles 2
Munich 2
San Mateo 2
Tortorici 2
Wilmington 2
Amman 1
Amparo 1
Amsterdam 1
Araucária 1
Barbacena 1
Bom Jesus de Goiás 1
Boston 1
Brescia 1
Brno 1
Buenos Aires 1
Cape Town 1
Central 1
Cerquilho 1
Changsha 1
Edinburgh 1
Embu das Artes 1
Erbil 1
Gebze 1
Hangzhou 1
Hebei 1
Iporá 1
Jiaxing 1
Joinville 1
Lappeenranta 1
Luanda 1
Magé 1
Mineral de la Reforma 1
Mogi Mirim 1
Moscow 1
Nuremberg 1
Ottawa 1
Padova 1
Palermo 1
Paulista 1
Pelotas 1
Porto Alegre 1
Presidente Prudente 1
Progresso 1
Ribas do Rio Pardo 1
Richmond 1
Seattle 1
Shenyang 1
São Luís de Montes Belos 1
São Paulo 1
Teresina 1
Vienna 1
Vitória 1
Washington 1
Woodbridge 1
Totale 496
Nome #
Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements 155
Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy 90
Drift mobility in 4H-SiC Schottky diodes 75
Effects of implantation defects onthe carrier concentration of 6H-SiC 72
Extensive Fermi-Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides 66
Effects of annealing temperature on the inhomogeneity degree of nickel silicide/SiC Schottky barrier 55
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells 52
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 42
Potentialities of nickel oxide as dielectric for GaN and SiC devices 42
Isolation of Bidimensional Electron Gas in AlGaN/GaN Heterojunction using C, Fe and Ar Ion Implantation 37
Totale 686
Categoria #
all - tutte 2.441
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.441


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203 0 0 0 0 0 0 0 0 0 0 2 1
2020/2021123 0 2 4 0 57 3 4 47 2 0 4 0
2021/202247 5 7 0 1 7 0 7 2 2 0 1 15
2022/2023148 11 17 9 17 10 29 1 20 24 2 4 4
2023/202481 2 18 5 8 4 6 0 5 0 13 12 8
2024/2025239 4 46 15 17 56 35 10 15 20 21 0 0
Totale 686