ROCCAFORTE, FABRIZIO
 Distribuzione geografica
Continente #
NA - Nord America 384
EU - Europa 201
AS - Asia 122
SA - Sud America 30
AF - Africa 14
Totale 751
Nazione #
US - Stati Uniti d'America 328
SG - Singapore 70
DE - Germania 63
CA - Canada 54
IT - Italia 50
CN - Cina 38
IE - Irlanda 30
BR - Brasile 25
UA - Ucraina 17
BE - Belgio 7
KR - Corea 7
CI - Costa d'Avorio 6
RU - Federazione Russa 6
FI - Finlandia 5
GB - Regno Unito 5
SN - Senegal 5
AT - Austria 4
FR - Francia 3
SE - Svezia 3
AR - Argentina 2
CO - Colombia 2
CZ - Repubblica Ceca 2
NL - Olanda 2
AO - Angola 1
BD - Bangladesh 1
BO - Bolivia 1
CH - Svizzera 1
ES - Italia 1
HK - Hong Kong 1
IQ - Iraq 1
JO - Giordania 1
LB - Libano 1
LT - Lituania 1
MA - Marocco 1
MX - Messico 1
PA - Panama 1
PL - Polonia 1
TR - Turchia 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 751
Città #
Chandler 68
Santa Clara 66
Toronto 52
Singapore 44
Dublin 30
Chicago 28
Jacksonville 20
Boardman 17
Civitanova Marche 12
Hefei 9
Nanjing 9
Andover 7
Ashburn 7
Bremen 7
Brussels 7
Cambridge 7
Catania 7
Council Bluffs 7
Lawrence 7
Seoul 7
Abidjan 6
Munich 6
Beijing 5
Dakar 5
Des Moines 5
Turin 5
Comiso 4
Los Angeles 4
Boston 3
Milan 3
Nanchang 3
Rome 3
The Dalles 3
Ann Arbor 2
Assago 2
Bogotá 2
Bologna 2
Columbus 2
Helsinki 2
Jinan 2
Liberty Lake 2
San Mateo 2
Seattle 2
Stockholm 2
Tortorici 2
Turku 2
Wilmington 2
Amman 1
Amparo 1
Amsterdam 1
Araucária 1
Barbacena 1
Bom Jesus de Goiás 1
Brasília 1
Brescia 1
Brno 1
Buenos Aires 1
Cape Town 1
Central 1
Cerquilho 1
Changsha 1
Cruz del Eje 1
Dallas 1
Edinburgh 1
Embu das Artes 1
Erbil 1
Gebze 1
Guariba 1
Hangzhou 1
Hebei 1
Iporá 1
Jiaxing 1
Joinville 1
Kenner 1
Lappeenranta 1
Luanda 1
Magé 1
Mineral de la Reforma 1
Mogi Mirim 1
Moscow 1
Nashville 1
Nova Iguaçu 1
Nuremberg 1
Olomouc 1
Ottawa 1
Padova 1
Palermo 1
Panama City 1
Paulista 1
Pelotas 1
Poplar 1
Porto Alegre 1
Presidente Prudente 1
Progresso 1
Ribas do Rio Pardo 1
Richmond 1
Santa Cruz 1
Shenyang 1
Southall 1
São Luís de Montes Belos 1
Totale 554
Nome #
Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements 160
Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy 96
Drift mobility in 4H-SiC Schottky diodes 83
Effects of implantation defects onthe carrier concentration of 6H-SiC 78
Extensive Fermi-Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides 75
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells 61
Effects of annealing temperature on the inhomogeneity degree of nickel silicide/SiC Schottky barrier 61
Isolation of Bidimensional Electron Gas in AlGaN/GaN Heterojunction using C, Fe and Ar Ion Implantation 54
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 51
Potentialities of nickel oxide as dielectric for GaN and SiC devices 45
Totale 764
Categoria #
all - tutte 2.758
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.758


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021123 0 2 4 0 57 3 4 47 2 0 4 0
2021/202247 5 7 0 1 7 0 7 2 2 0 1 15
2022/2023148 11 17 9 17 10 29 1 20 24 2 4 4
2023/202481 2 18 5 8 4 6 0 5 0 13 12 8
2024/2025286 4 46 15 17 56 35 10 15 20 21 29 18
2025/202631 31 0 0 0 0 0 0 0 0 0 0 0
Totale 764