FOTI, Gaetano
 Distribuzione geografica
Continente #
NA - Nord America 227
EU - Europa 104
AS - Asia 75
SA - Sud America 19
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 440
Nazione #
US - Stati Uniti d'America 218
SG - Singapore 39
CN - Cina 31
IT - Italia 29
IE - Irlanda 26
UA - Ucraina 24
BR - Brasile 18
CA - Canada 9
RU - Federazione Russa 7
SN - Senegal 7
CI - Costa d'Avorio 6
SE - Svezia 6
DE - Germania 4
FI - Finlandia 3
IR - Iran 2
JP - Giappone 2
AU - Australia 1
BE - Belgio 1
CH - Svizzera 1
CY - Cipro 1
EC - Ecuador 1
EU - Europa 1
FR - Francia 1
GB - Regno Unito 1
GR - Grecia 1
Totale 440
Città #
Santa Clara 47
Chandler 39
Singapore 33
Jacksonville 28
Dublin 26
Chicago 15
Catania 13
Boardman 12
Civitanova Marche 10
Nanjing 9
Andover 7
Cambridge 7
Dakar 7
Lawrence 7
Toronto 7
Abidjan 6
Des Moines 6
Hebei 4
Shenyang 4
Wilmington 4
Helsinki 3
Rome 3
San Mateo 3
Ashburn 2
Council Bluffs 2
Jiaxing 2
Moscow 2
Nuremberg 2
Ottawa 2
Tokyo 2
Araxá 1
Atlanta 1
Augusta 1
Bento Gonçalves 1
Boqueirão 1
Bremen 1
Brisbane 1
Brussels 1
Changsha 1
Franca 1
Franco da Rocha 1
Grafing 1
Guangzhou 1
Guayaquil 1
Hangzhou 1
Itapeva 1
Ivinhema 1
Jinan 1
Lamia 1
Lanzhou 1
Los Angeles 1
Manchester 1
Minneapolis 1
Nanchang 1
Nicosia 1
Ningbo 1
Paudalho 1
Pouso Alegre 1
Sabz 1
Saint Petersburg 1
San Jose 1
Santa Margarida 1
Santana de Parnaíba 1
Saquarema 1
Sarandi 1
Shenzhen 1
Siracusa 1
São José dos Pinhais 1
São Paulo 1
Tappahannock 1
The Dalles 1
Tianjin 1
Torres 1
Trento 1
Unaí 1
União dos Palmares 1
Totale 360
Nome #
Point defects induced in ion irradiated 4H-SiC probed by exciton lines 81
AuSi compound formation induced by ion mixing 76
Ion track effect on point defect production in SiC 66
Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes 65
Optimisation of epitaxial layers growth with HCl addition by optical and electrical characterization 62
Secondary Electron Emission from Various Material Bombarded with Protons at E=2.5 MeV 56
Low temperature reaction of point defects in ion irradiated 4H-SiC 54
Totale 460
Categoria #
all - tutte 1.702
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.702


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20205 0 0 0 0 0 0 0 0 0 0 3 2
2020/202143 0 3 6 0 11 1 6 0 4 0 10 2
2021/202255 7 7 0 1 10 0 8 2 5 0 1 14
2022/202399 7 13 1 12 5 16 0 19 19 0 6 1
2023/202436 4 3 1 3 4 3 0 1 0 6 7 4
2024/2025160 4 30 11 14 30 27 6 8 11 19 0 0
Totale 460