FOTI, Gaetano
 Distribuzione geografica
Continente #
NA - Nord America 309
AS - Asia 114
EU - Europa 113
SA - Sud America 26
AF - Africa 25
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 589
Nazione #
US - Stati Uniti d'America 299
CN - Cina 51
SG - Singapore 47
IT - Italia 29
IE - Irlanda 26
BR - Brasile 25
UA - Ucraina 25
CI - Costa d'Avorio 13
CA - Canada 10
RU - Federazione Russa 8
SE - Svezia 7
SN - Senegal 7
ZA - Sudafrica 5
DE - Germania 4
FI - Finlandia 4
BD - Bangladesh 3
HK - Hong Kong 2
IR - Iran 2
JP - Giappone 2
KR - Corea 2
PL - Polonia 2
VN - Vietnam 2
AU - Australia 1
BE - Belgio 1
BG - Bulgaria 1
CH - Svizzera 1
CY - Cipro 1
EC - Ecuador 1
EU - Europa 1
FR - Francia 1
GB - Regno Unito 1
GR - Grecia 1
LT - Lituania 1
NL - Olanda 1
SA - Arabia Saudita 1
TR - Turchia 1
Totale 589
Città #
Dallas 50
Santa Clara 48
Chandler 39
Singapore 37
Jacksonville 28
Dublin 26
Chicago 15
Abidjan 13
Catania 13
Boardman 12
Civitanova Marche 10
Ashburn 9
Nanjing 9
Beijing 8
Hefei 8
Andover 7
Cambridge 7
Dakar 7
Lawrence 7
Toronto 7
Des Moines 6
Johannesburg 5
Hebei 4
Shenyang 4
Wilmington 4
Columbus 3
Helsinki 3
Rome 3
San Jose 3
San Mateo 3
Council Bluffs 2
Hong Kong 2
Jiaxing 2
Minneapolis 2
Moscow 2
Nuremberg 2
Ottawa 2
Redondo Beach 2
Seoul 2
São Paulo 2
The Dalles 2
Tokyo 2
Warsaw 2
Araxá 1
Atlanta 1
Augusta 1
Bagé 1
Bento Gonçalves 1
Boqueirão 1
Bremen 1
Brisbane 1
Brussels 1
Buffalo 1
Changsha 1
Chattanooga 1
Cleveland 1
Dhaka 1
Franca 1
Franco da Rocha 1
Grafing 1
Guangzhou 1
Guayaquil 1
Hangzhou 1
Hanoi 1
Ho Chi Minh City 1
Houston 1
Itapeva 1
Itapevi 1
Ivinhema 1
Jeddah 1
Jinan 1
Joinville 1
Lamia 1
Lanzhou 1
Los Angeles 1
Manchester 1
Matozinhos 1
Merkez 1
Morrinhos do Sul 1
Nanchang 1
New York 1
Nicosia 1
Ningbo 1
Orem 1
Paudalho 1
Porto Alegre 1
Pouso Alegre 1
Rostov-on-Don 1
Sabz 1
Saint Petersburg 1
Santa Margarida 1
Santana de Parnaíba 1
Saquarema 1
Sarandi 1
Seattle 1
Secaucus 1
Shenzhen 1
Siracusa 1
Sofia 1
St Louis 1
Totale 481
Nome #
AuSi compound formation induced by ion mixing 113
Point defects induced in ion irradiated 4H-SiC probed by exciton lines 99
Ion track effect on point defect production in SiC 85
Optimisation of epitaxial layers growth with HCl addition by optical and electrical characterization 84
Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes 82
Secondary Electron Emission from Various Material Bombarded with Protons at E=2.5 MeV 81
Low temperature reaction of point defects in ion irradiated 4H-SiC 65
Totale 609
Categoria #
all - tutte 2.220
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.220


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202134 0 0 0 0 11 1 6 0 4 0 10 2
2021/202255 7 7 0 1 10 0 8 2 5 0 1 14
2022/202399 7 13 1 12 5 16 0 19 19 0 6 1
2023/202436 4 3 1 3 4 3 0 1 0 6 7 4
2024/2025184 4 30 11 14 30 27 6 8 11 19 14 10
2025/2026125 20 14 57 17 17 0 0 0 0 0 0 0
Totale 609