FOTI, Gaetano
 Distribuzione geografica
Continente #
NA - Nord America 238
EU - Europa 106
AS - Asia 86
SA - Sud America 26
AF - Africa 15
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 473
Nazione #
US - Stati Uniti d'America 228
SG - Singapore 43
CN - Cina 34
IT - Italia 29
IE - Irlanda 26
BR - Brasile 25
UA - Ucraina 24
CA - Canada 10
RU - Federazione Russa 7
SN - Senegal 7
CI - Costa d'Avorio 6
SE - Svezia 6
DE - Germania 4
FI - Finlandia 4
BD - Bangladesh 2
IR - Iran 2
JP - Giappone 2
ZA - Sudafrica 2
AU - Australia 1
BE - Belgio 1
BG - Bulgaria 1
CH - Svizzera 1
CY - Cipro 1
EC - Ecuador 1
EU - Europa 1
FR - Francia 1
GB - Regno Unito 1
GR - Grecia 1
SA - Arabia Saudita 1
VN - Vietnam 1
Totale 473
Città #
Santa Clara 47
Chandler 39
Singapore 37
Jacksonville 28
Dublin 26
Chicago 15
Catania 13
Boardman 12
Civitanova Marche 10
Nanjing 9
Andover 7
Cambridge 7
Dakar 7
Lawrence 7
Toronto 7
Abidjan 6
Des Moines 6
Hebei 4
Shenyang 4
Wilmington 4
Ashburn 3
Columbus 3
Hefei 3
Helsinki 3
Rome 3
San Mateo 3
Council Bluffs 2
Jiaxing 2
Johannesburg 2
Moscow 2
Nuremberg 2
Ottawa 2
San Jose 2
São Paulo 2
The Dalles 2
Tokyo 2
Araxá 1
Atlanta 1
Augusta 1
Bagé 1
Bento Gonçalves 1
Boqueirão 1
Bremen 1
Brisbane 1
Brussels 1
Changsha 1
Chattanooga 1
Dhaka 1
Franca 1
Franco da Rocha 1
Grafing 1
Guangzhou 1
Guayaquil 1
Hangzhou 1
Hanoi 1
Itapeva 1
Itapevi 1
Ivinhema 1
Jeddah 1
Jinan 1
Joinville 1
Lamia 1
Lanzhou 1
Los Angeles 1
Manchester 1
Matozinhos 1
Minneapolis 1
Morrinhos do Sul 1
Nanchang 1
New York 1
Nicosia 1
Ningbo 1
Paudalho 1
Porto Alegre 1
Pouso Alegre 1
Sabz 1
Saint Petersburg 1
Santa Margarida 1
Santana de Parnaíba 1
Saquarema 1
Sarandi 1
Seattle 1
Shenzhen 1
Siracusa 1
Sofia 1
São José dos Pinhais 1
Tappahannock 1
Tianjin 1
Torres 1
Trento 1
Turku 1
Unaí 1
União dos Palmares 1
Totale 390
Nome #
Point defects induced in ion irradiated 4H-SiC probed by exciton lines 86
AuSi compound formation induced by ion mixing 82
Ion track effect on point defect production in SiC 70
Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes 69
Optimisation of epitaxial layers growth with HCl addition by optical and electrical characterization 66
Secondary Electron Emission from Various Material Bombarded with Protons at E=2.5 MeV 62
Low temperature reaction of point defects in ion irradiated 4H-SiC 58
Totale 493
Categoria #
all - tutte 1.870
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.870


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202143 0 3 6 0 11 1 6 0 4 0 10 2
2021/202255 7 7 0 1 10 0 8 2 5 0 1 14
2022/202399 7 13 1 12 5 16 0 19 19 0 6 1
2023/202436 4 3 1 3 4 3 0 1 0 6 7 4
2024/2025184 4 30 11 14 30 27 6 8 11 19 14 10
2025/20269 9 0 0 0 0 0 0 0 0 0 0 0
Totale 493