FOTI, Gaetano
 Distribuzione geografica
Continente #
NA - Nord America 249
EU - Europa 110
AS - Asia 99
SA - Sud America 26
AF - Africa 15
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 501
Nazione #
US - Stati Uniti d'America 239
CN - Cina 43
SG - Singapore 43
IT - Italia 29
IE - Irlanda 26
BR - Brasile 25
UA - Ucraina 25
CA - Canada 10
RU - Federazione Russa 8
SN - Senegal 7
CI - Costa d'Avorio 6
SE - Svezia 6
DE - Germania 4
FI - Finlandia 4
BD - Bangladesh 2
HK - Hong Kong 2
IR - Iran 2
JP - Giappone 2
KR - Corea 2
ZA - Sudafrica 2
AU - Australia 1
BE - Belgio 1
BG - Bulgaria 1
CH - Svizzera 1
CY - Cipro 1
EC - Ecuador 1
EU - Europa 1
FR - Francia 1
GB - Regno Unito 1
GR - Grecia 1
NL - Olanda 1
PL - Polonia 1
SA - Arabia Saudita 1
VN - Vietnam 1
Totale 501
Città #
Santa Clara 48
Chandler 39
Singapore 37
Jacksonville 28
Dublin 26
Chicago 15
Catania 13
Boardman 12
Civitanova Marche 10
Nanjing 9
Hefei 8
Andover 7
Cambridge 7
Dakar 7
Lawrence 7
Toronto 7
Abidjan 6
Dallas 6
Des Moines 6
Ashburn 5
Beijing 4
Hebei 4
Shenyang 4
Wilmington 4
Columbus 3
Helsinki 3
Rome 3
San Mateo 3
Council Bluffs 2
Hong Kong 2
Jiaxing 2
Johannesburg 2
Minneapolis 2
Moscow 2
Nuremberg 2
Ottawa 2
San Jose 2
Seoul 2
São Paulo 2
The Dalles 2
Tokyo 2
Araxá 1
Atlanta 1
Augusta 1
Bagé 1
Bento Gonçalves 1
Boqueirão 1
Bremen 1
Brisbane 1
Brussels 1
Changsha 1
Chattanooga 1
Dhaka 1
Franca 1
Franco da Rocha 1
Grafing 1
Guangzhou 1
Guayaquil 1
Hangzhou 1
Hanoi 1
Itapeva 1
Itapevi 1
Ivinhema 1
Jeddah 1
Jinan 1
Joinville 1
Lamia 1
Lanzhou 1
Los Angeles 1
Manchester 1
Matozinhos 1
Morrinhos do Sul 1
Nanchang 1
New York 1
Nicosia 1
Ningbo 1
Paudalho 1
Porto Alegre 1
Pouso Alegre 1
Rostov-on-Don 1
Sabz 1
Saint Petersburg 1
Santa Margarida 1
Santana de Parnaíba 1
Saquarema 1
Sarandi 1
Seattle 1
Secaucus 1
Shenzhen 1
Siracusa 1
Sofia 1
São José dos Pinhais 1
Tappahannock 1
Tianjin 1
Torres 1
Trento 1
Turku 1
Unaí 1
União dos Palmares 1
Warsaw 1
Totale 416
Nome #
AuSi compound formation induced by ion mixing 91
Point defects induced in ion irradiated 4H-SiC probed by exciton lines 90
Ion track effect on point defect production in SiC 73
Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes 71
Secondary Electron Emission from Various Material Bombarded with Protons at E=2.5 MeV 69
Optimisation of epitaxial layers growth with HCl addition by optical and electrical characterization 67
Low temperature reaction of point defects in ion irradiated 4H-SiC 60
Totale 521
Categoria #
all - tutte 2.003
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.003


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202140 0 0 6 0 11 1 6 0 4 0 10 2
2021/202255 7 7 0 1 10 0 8 2 5 0 1 14
2022/202399 7 13 1 12 5 16 0 19 19 0 6 1
2023/202436 4 3 1 3 4 3 0 1 0 6 7 4
2024/2025184 4 30 11 14 30 27 6 8 11 19 14 10
2025/202637 20 14 3 0 0 0 0 0 0 0 0 0
Totale 521