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LOW-TEMPERATURE MODIFICATIONS IN THE DEFECT STRUCTURE OF AMORPHOUS-SILICON PROBED BY IN-SITU RAMAN-SPECTROSCOPY
file da validare1993-01-01 Battaglia, A; Coffa, S; Priolo, Francesco; Compagnini, Giuseppe Romano; Baratta, Ga
CONDUCTIVITY CHANGES AND IMPURITY DEFECT INTERACTIONS IN ION-IMPLANTED AMORPHOUS-SILICON
file da validare1993-01-01 Coffa, S; Priolo, Francesco; Poate, Jm; Glarum, Sh
3-DIMENSIONAL CONCENTRATION PROFILES OF HYBRID DIFFUSERS IN CRYSTALLINE SILICON
file da validare1993-01-01 Coffa, S; Privitera, V; Frisina, F; Priolo, Francesco
ELECTRICAL AND OPTICAL CHARACTERIZATION OF ER-IMPLANTED SI - THE ROLE OF IMPURITIES AND DEFECTS
file da validare1993-01-01 Priolo, Francesco; Coffa, S; Franzo, G; Spinella, C; Carnera, A; Bellani, V.
INTERFACE STRUCTURE DURING ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON
file da validare1993-01-01 Custer, Js; Battaglia, A; Saggio, M; Priolo, Francesco
MECHANISMS OF AMORPHIZATION IN ION-IMPLANTED CRYSTALLINE SILICON
file da validare1993-01-01 Campisano, Su; Coffa, S; Raineri, V; Priolo, Francesco; Rimini, E.
REDUCTION OF SECONDARY DEFECT DENSITY BY C-IMPLANT AND B-IMPLANT IN GEXSI1-X LAYERS FORMED BY HIGH-DOSE GE IMPLANTATION IN (100) SI
file da validare1993-01-01 Lombardo, S; Priolo, Francesco; Campisano, Su; Lagomarsino, S.
DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED AMORPHOUS-SILICON
file da validare1993-01-01 Coffa, S; Priolo, Francesco; Battaglia, A.
OPTICAL ACTIVATION AND EXCITATION MECHANISMS OF ER IMPLANTED IN SI
file da validare1993-01-01 Coffa, S; Priolo, Francesco; Franzo, G; Bellani, V; Carnera, A; Spinella, C.
DIFFUSION AND OUTDIFFUSION OF ALUMINUM IMPLANTED INTO SILICON
file da validare1993-01-01 Galvagno, G; Lavia, F; Priolo, Francesco; Rimini, E.
DIRECT-ENERGY PROCESSES AND PHASE-TRANSITIONS IN SILICON
file da validare1993-01-01 Rimini, E; Priolo, Francesco; Spinella, C.
ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI
file da validare1994-01-01 Franzo, G; Priolo, Francesco; Coffa, S; Polman, A; Carnera, A.
DEFECT EVOLUTION DURING ION-BOMBARDMENT OF AMORPHOUS SI PROBED BY IN-SITU CONDUCTIVITY MEASUREMENTS
file da validare1994-01-01 Priolo, Francesco; Coffa, S; Battaglia, A.
TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI
file da validare1994-01-01 Coffa, S; Franzo, G; Priolo, Francesco; Polman, A; Serna, R.
INTERFACE EVOLUTION AND EPITAXIAL REALIGNMENT IN POLYCRYSTAL SINGLE-CRYSTAL SI STRUCTURES
file da validare1994-01-01 Priolo, Francesco; Benyaich, F; Campisano, Su; Rimini, E; Spinella, C; Cacciato, A; Ward, P; Fallico, G.
CHANNELING IMPLANTS IN SILICON-CRYSTALS
file da validare1994-01-01 Raineri, V; Privitera, V; Galvagno, G; Priolo, Francesco; Rimini, E.
NANOCRYSTAL SIZE MODIFICATIONS IN POROUS SILICON BY PREANODIZATION ION-IMPLANTATION
file da validare1994-01-01 Pavesi, L; Giebel, G; Ziglio, F; Mariotto, G; Priolo, Francesco; Campisano, Su; Spinella, C.
AL-O INTERACTIONS IN ION-IMPLANTED CRYSTALLINE SILICON
file da validare1994-01-01 Galvagno, G; Laferla, A; Spinella, C; Priolo, Francesco; Raineri, V; Torrisi, L; Rimini, E; Carnera, A; Gasparotto, A.
INTERFACE ROUGHNESS DURING THERMAL AND ION-INDUCED REGROWTH OF AMORPHOUS LAYERS ON SI(001)
file da validare1994-01-01 Lohmeier, M; Devries, S; Custer, Js; Vlieg, E; Finney, Ms; Priolo, Francesco; Battaglia, A.
DEFECT ACCUMULATION DURING ION IRRADIATION OF CRYSTALLINE SI PROBED BY IN-SITU CONDUCTIVITY MEASUREMENTS
file da validare1994-01-01 Battaglia, A; Coffa, S; Priolo, Francesco; Spinella, C.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
LOW-TEMPERATURE MODIFICATIONS IN THE DEFECT STRUCTURE OF AMORPHOUS-SILICON PROBED BY IN-SITU RAMAN-SPECTROSCOPY | 1-gen-1993 | Battaglia, A; Coffa, S; Priolo, Francesco; Compagnini, Giuseppe Romano; Baratta, Ga | file da validare |
CONDUCTIVITY CHANGES AND IMPURITY DEFECT INTERACTIONS IN ION-IMPLANTED AMORPHOUS-SILICON | 1-gen-1993 | Coffa, S; Priolo, Francesco; Poate, Jm; Glarum, Sh | file da validare |
3-DIMENSIONAL CONCENTRATION PROFILES OF HYBRID DIFFUSERS IN CRYSTALLINE SILICON | 1-gen-1993 | Coffa, S; Privitera, V; Frisina, F; Priolo, Francesco | file da validare |
ELECTRICAL AND OPTICAL CHARACTERIZATION OF ER-IMPLANTED SI - THE ROLE OF IMPURITIES AND DEFECTS | 1-gen-1993 | Priolo, Francesco; Coffa, S; Franzo, G; Spinella, C; Carnera, A; Bellani, V. | file da validare |
INTERFACE STRUCTURE DURING ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON | 1-gen-1993 | Custer, Js; Battaglia, A; Saggio, M; Priolo, Francesco | file da validare |
MECHANISMS OF AMORPHIZATION IN ION-IMPLANTED CRYSTALLINE SILICON | 1-gen-1993 | Campisano, Su; Coffa, S; Raineri, V; Priolo, Francesco; Rimini, E. | file da validare |
REDUCTION OF SECONDARY DEFECT DENSITY BY C-IMPLANT AND B-IMPLANT IN GEXSI1-X LAYERS FORMED BY HIGH-DOSE GE IMPLANTATION IN (100) SI | 1-gen-1993 | Lombardo, S; Priolo, Francesco; Campisano, Su; Lagomarsino, S. | file da validare |
DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED AMORPHOUS-SILICON | 1-gen-1993 | Coffa, S; Priolo, Francesco; Battaglia, A. | file da validare |
OPTICAL ACTIVATION AND EXCITATION MECHANISMS OF ER IMPLANTED IN SI | 1-gen-1993 | Coffa, S; Priolo, Francesco; Franzo, G; Bellani, V; Carnera, A; Spinella, C. | file da validare |
DIFFUSION AND OUTDIFFUSION OF ALUMINUM IMPLANTED INTO SILICON | 1-gen-1993 | Galvagno, G; Lavia, F; Priolo, Francesco; Rimini, E. | file da validare |
DIRECT-ENERGY PROCESSES AND PHASE-TRANSITIONS IN SILICON | 1-gen-1993 | Rimini, E; Priolo, Francesco; Spinella, C. | file da validare |
ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI | 1-gen-1994 | Franzo, G; Priolo, Francesco; Coffa, S; Polman, A; Carnera, A. | file da validare |
DEFECT EVOLUTION DURING ION-BOMBARDMENT OF AMORPHOUS SI PROBED BY IN-SITU CONDUCTIVITY MEASUREMENTS | 1-gen-1994 | Priolo, Francesco; Coffa, S; Battaglia, A. | file da validare |
TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI | 1-gen-1994 | Coffa, S; Franzo, G; Priolo, Francesco; Polman, A; Serna, R. | file da validare |
INTERFACE EVOLUTION AND EPITAXIAL REALIGNMENT IN POLYCRYSTAL SINGLE-CRYSTAL SI STRUCTURES | 1-gen-1994 | Priolo, Francesco; Benyaich, F; Campisano, Su; Rimini, E; Spinella, C; Cacciato, A; Ward, P; Fallico, G. | file da validare |
CHANNELING IMPLANTS IN SILICON-CRYSTALS | 1-gen-1994 | Raineri, V; Privitera, V; Galvagno, G; Priolo, Francesco; Rimini, E. | file da validare |
NANOCRYSTAL SIZE MODIFICATIONS IN POROUS SILICON BY PREANODIZATION ION-IMPLANTATION | 1-gen-1994 | Pavesi, L; Giebel, G; Ziglio, F; Mariotto, G; Priolo, Francesco; Campisano, Su; Spinella, C. | file da validare |
AL-O INTERACTIONS IN ION-IMPLANTED CRYSTALLINE SILICON | 1-gen-1994 | Galvagno, G; Laferla, A; Spinella, C; Priolo, Francesco; Raineri, V; Torrisi, L; Rimini, E; Carnera, A; Gasparotto, A. | file da validare |
INTERFACE ROUGHNESS DURING THERMAL AND ION-INDUCED REGROWTH OF AMORPHOUS LAYERS ON SI(001) | 1-gen-1994 | Lohmeier, M; Devries, S; Custer, Js; Vlieg, E; Finney, Ms; Priolo, Francesco; Battaglia, A. | file da validare |
DEFECT ACCUMULATION DURING ION IRRADIATION OF CRYSTALLINE SI PROBED BY IN-SITU CONDUCTIVITY MEASUREMENTS | 1-gen-1994 | Battaglia, A; Coffa, S; Priolo, Francesco; Spinella, C. | file da validare |
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