Sfoglia per Autore
High-resolution X-ray diffraction by end of range defects in self-amorphized Ge
2008-01-01 Bisognin, G; Vangelista, S; Bruno, Elena
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study
2008-01-01 Bisognin, G; De Salvador, D; Napolitani, E; Carnera, A; Bruno, Elena; Mirabella, Salvatore; Piro, Am; Romano, Lucia; Grimaldi, Maria Grazia
Experimental investigations of boron diffusion mechanism in crystalline and amorphous silicon
2008-01-01 D., DE SALVADOR; E., Napolitani; Mirabella, Salvatore; Bruno, Elena; G., Impellizzeri; G., Bisognin; E. F., Pecora; Priolo, Francesco; A., Carnera
B electrical activation in crystalline and preamorphized Ge
2008-01-01 Bruno, Elena; Impellizzeri, G; Mirabella, Salvatore; Piro, A. M.; Irrera, A.; Grimaldi, Maria Grazia
Mechanism of Boron Diffusion in Amorphous Silicon
2008-01-01 Mirabella, Salvatore; DE SALVADOR, D; Bruno, Elena; Napolitani, E; Pecora, E. F.; Boninelli, S; Priolo, Francesco
He implantation to control B diffusion in crystalline and preamorphized Si
2008-01-01 Bruno, Elena; Mirabella, Salvatore; Priolo, Francesco; Kuitunen, K; Tuomisto, F; Slotte, J; Giannazzo, F; Bongiorno, C; Raineri, V; Napolitani, E.
Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects
2008-01-01 Aboy, M; Pelaz, L; Lopez, P; Bruno, Elena; Mirabella, Salvatore; Napolitani, E.
Activation and carrier mobility in high fluence B implanted germanium
2008-01-01 Mirabella, Salvatore; Impellizzeri, G; Piro, Am; Bruno, Elena; Grimaldi, Maria Grazia
Effects of hydrogen implantation temperature on InP surface blistering
2008-01-01 Chen, P; Di, Zf; Nastasi, M; Bruno, Elena; Grimaldi, Maria Grazia; Theodore, Nd; Lau, Ss
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si
2008-01-01 D'Angelo, D; Mirabella, Salvatore; Bruno, Elena; Pulvirenti, G; Terrasi, Antonio; Bisognin, G; Berti, M; Bongiorno, C; Raineri, V.
Localization of He induced nanovoids in buried Si1-xGex thin films
2008-01-01 D'Angelo, D; Mirabella, Salvatore; Bruno, Elena; Terrasi, Antonio; Bongiorno, C; Giannazzo, F; Raineri, V; Bisognin, G; Berti, M.
Mechanism of B diffusion in crystalline Ge under proton irradiation
2009-01-01 Bruno, Elena; Mirabella, Salvatore; Scapellato, G; Impellizzeri, G; Terrasi, Antonio; Priolo, Francesco; Napolitani, E; DE SALVADOR, D; Mastromatteo, M; Carnera, A.
He implantation induced nanovoids in crystalline Si
2009-01-01 Kilpelainen, S; Kuitunen, K; Slotte, J; Tuomisto, F; Bruno, E; Mirabella, S; Priolo, F
Carrier mobility degradation in highly B-doped junctions
file da validare2009-01-01 Maria, Aboy; Lourdes, Pelaz; Pedro, Lopez; Bruno, Elena; Mirabella, Salvatore
B activation and clustering in ion-implanted Ge
2009-01-01 Impellizzeri, G; Mirabella, Salvatore; Bruno, Elena; Piro, A. M.; Grimaldi, Maria Grazia
Vacancy engineering by He induced nanovoids in crystalline Si
2009-01-01 Kilpelainen, S; Kuitunen, K; Tuomisto, F; Slotte, J; Bruno, Elena; Mirabella, Salvatore; Priolo, Francesco
Diffusion and clustering of B in Si: basics and defect engineering
file da validare2010-01-01 Bruno, Elena
High-level incorporation of antimony in germanium by laser annealing
2010-01-01 Bruno, Elena; Scapellato, G. G.; Bisognin, G; Carria, E; Romano, Lucia; Carnera, A; Priolo, Francesco
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution
2010-01-01 Bisognin, G; Vangelista, S; Mastromatteo, M; Napolitani, E; De Salvador, D; Carnera, A; Berti, M; Bruno, Elena; Scapellato, G; Terrasi, Antonio
Recent Insights in the Diffusion of Boron in Silicon and Germanium
file da validare2010-01-01 Mirabella, Salvatore; De Salvador, D.; Bruno, E.; Napolitani, E.; Scapellato, G. G.; Mastromatteo, M.; Impellizzeri, G.; Bisognin, G.; Boninelli, S.; Terrasi, Antonio; Carnera, A.; Priolo, Francesco
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
High-resolution X-ray diffraction by end of range defects in self-amorphized Ge | 1-gen-2008 | Bisognin, G; Vangelista, S; Bruno, Elena | |
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study | 1-gen-2008 | Bisognin, G; De Salvador, D; Napolitani, E; Carnera, A; Bruno, Elena; Mirabella, Salvatore; Piro, Am; Romano, Lucia; Grimaldi, Maria Grazia | |
Experimental investigations of boron diffusion mechanism in crystalline and amorphous silicon | 1-gen-2008 | D., DE SALVADOR; E., Napolitani; Mirabella, Salvatore; Bruno, Elena; G., Impellizzeri; G., Bisognin; E. F., Pecora; Priolo, Francesco; A., Carnera | |
B electrical activation in crystalline and preamorphized Ge | 1-gen-2008 | Bruno, Elena; Impellizzeri, G; Mirabella, Salvatore; Piro, A. M.; Irrera, A.; Grimaldi, Maria Grazia | |
Mechanism of Boron Diffusion in Amorphous Silicon | 1-gen-2008 | Mirabella, Salvatore; DE SALVADOR, D; Bruno, Elena; Napolitani, E; Pecora, E. F.; Boninelli, S; Priolo, Francesco | |
He implantation to control B diffusion in crystalline and preamorphized Si | 1-gen-2008 | Bruno, Elena; Mirabella, Salvatore; Priolo, Francesco; Kuitunen, K; Tuomisto, F; Slotte, J; Giannazzo, F; Bongiorno, C; Raineri, V; Napolitani, E. | |
Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects | 1-gen-2008 | Aboy, M; Pelaz, L; Lopez, P; Bruno, Elena; Mirabella, Salvatore; Napolitani, E. | |
Activation and carrier mobility in high fluence B implanted germanium | 1-gen-2008 | Mirabella, Salvatore; Impellizzeri, G; Piro, Am; Bruno, Elena; Grimaldi, Maria Grazia | |
Effects of hydrogen implantation temperature on InP surface blistering | 1-gen-2008 | Chen, P; Di, Zf; Nastasi, M; Bruno, Elena; Grimaldi, Maria Grazia; Theodore, Nd; Lau, Ss | |
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si | 1-gen-2008 | D'Angelo, D; Mirabella, Salvatore; Bruno, Elena; Pulvirenti, G; Terrasi, Antonio; Bisognin, G; Berti, M; Bongiorno, C; Raineri, V. | |
Localization of He induced nanovoids in buried Si1-xGex thin films | 1-gen-2008 | D'Angelo, D; Mirabella, Salvatore; Bruno, Elena; Terrasi, Antonio; Bongiorno, C; Giannazzo, F; Raineri, V; Bisognin, G; Berti, M. | |
Mechanism of B diffusion in crystalline Ge under proton irradiation | 1-gen-2009 | Bruno, Elena; Mirabella, Salvatore; Scapellato, G; Impellizzeri, G; Terrasi, Antonio; Priolo, Francesco; Napolitani, E; DE SALVADOR, D; Mastromatteo, M; Carnera, A. | |
He implantation induced nanovoids in crystalline Si | 1-gen-2009 | Kilpelainen, S; Kuitunen, K; Slotte, J; Tuomisto, F; Bruno, E; Mirabella, S; Priolo, F | |
Carrier mobility degradation in highly B-doped junctions | 1-gen-2009 | Maria, Aboy; Lourdes, Pelaz; Pedro, Lopez; Bruno, Elena; Mirabella, Salvatore | file da validare |
B activation and clustering in ion-implanted Ge | 1-gen-2009 | Impellizzeri, G; Mirabella, Salvatore; Bruno, Elena; Piro, A. M.; Grimaldi, Maria Grazia | |
Vacancy engineering by He induced nanovoids in crystalline Si | 1-gen-2009 | Kilpelainen, S; Kuitunen, K; Tuomisto, F; Slotte, J; Bruno, Elena; Mirabella, Salvatore; Priolo, Francesco | |
Diffusion and clustering of B in Si: basics and defect engineering | 1-gen-2010 | Bruno, Elena | file da validare |
High-level incorporation of antimony in germanium by laser annealing | 1-gen-2010 | Bruno, Elena; Scapellato, G. G.; Bisognin, G; Carria, E; Romano, Lucia; Carnera, A; Priolo, Francesco | |
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution | 1-gen-2010 | Bisognin, G; Vangelista, S; Mastromatteo, M; Napolitani, E; De Salvador, D; Carnera, A; Berti, M; Bruno, Elena; Scapellato, G; Terrasi, Antonio | |
Recent Insights in the Diffusion of Boron in Silicon and Germanium | 1-gen-2010 | Mirabella, Salvatore; De Salvador, D.; Bruno, E.; Napolitani, E.; Scapellato, G. G.; Mastromatteo, M.; Impellizzeri, G.; Bisognin, G.; Boninelli, S.; Terrasi, Antonio; Carnera, A.; Priolo, Francesco | file da validare |
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