IRIS
ROMANO, LUCIA
 Distribuzione geografica
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Continente #
NA - Nord America 4.215
AS - Asia 1.644
EU - Europa 1.368
SA - Sud America 317
AF - Africa 113
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 3
Totale 7.664
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Nazione #
US - Stati Uniti d'America 4.060
SG - Singapore 793
CN - Cina 608
IE - Irlanda 392
UA - Ucraina 372
BR - Brasile 276
IT - Italia 141
CA - Canada 139
RU - Federazione Russa 118
SE - Svezia 109
CI - Costa d'Avorio 82
FI - Finlandia 56
VN - Vietnam 49
GB - Regno Unito 45
KR - Corea 38
HK - Hong Kong 36
DE - Germania 30
IN - India 25
FR - Francia 24
CH - Svizzera 17
TR - Turchia 16
BD - Bangladesh 15
AR - Argentina 13
ID - Indonesia 13
PL - Polonia 12
EC - Ecuador 11
NL - Olanda 11
SN - Senegal 11
JP - Giappone 10
AT - Austria 9
MX - Messico 8
ES - Italia 7
GR - Grecia 7
IQ - Iraq 7
UZ - Uzbekistan 7
NG - Nigeria 6
PE - Perù 6
ZA - Sudafrica 6
LB - Libano 5
LT - Lituania 5
AU - Australia 4
CO - Colombia 4
CZ - Repubblica Ceca 4
BE - Belgio 3
MA - Marocco 3
AL - Albania 2
CL - Cile 2
DZ - Algeria 2
EU - Europa 2
GT - Guatemala 2
HN - Honduras 2
JO - Giordania 2
KE - Kenya 2
MY - Malesia 2
OM - Oman 2
PH - Filippine 2
PK - Pakistan 2
PY - Paraguay 2
RO - Romania 2
VE - Venezuela 2
AZ - Azerbaigian 1
BH - Bahrain 1
BO - Bolivia 1
CR - Costa Rica 1
DK - Danimarca 1
DO - Repubblica Dominicana 1
EG - Egitto 1
IL - Israele 1
IR - Iran 1
JM - Giamaica 1
KH - Cambogia 1
KZ - Kazakistan 1
LK - Sri Lanka 1
ME - Montenegro 1
MN - Mongolia 1
NP - Nepal 1
QA - Qatar 1
SA - Arabia Saudita 1
SV - El Salvador 1
TJ - Tagikistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 7.664
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Città #
Dallas 659
Santa Clara 597
Chandler 489
Singapore 451
Dublin 390
Jacksonville 383
Boardman 195
Chicago 178
Ashburn 139
Nanjing 137
Beijing 112
Andover 110
Lawrence 110
Cambridge 109
Toronto 99
Catania 90
Hefei 85
Abidjan 82
San Mateo 52
Des Moines 49
Helsinki 49
Council Bluffs 41
Wilmington 39
Columbus 36
Hong Kong 36
Nanchang 36
Seoul 36
Saint Petersburg 34
The Dalles 34
Shenyang 32
Los Angeles 31
Hebei 29
Changsha 24
Jiaxing 24
Ottawa 23
Ann Arbor 22
Civitanova Marche 18
Moscow 16
Norwalk 14
São Paulo 14
Tianjin 14
Montreal 13
New York 13
Seattle 13
Boston 12
Ho Chi Minh City 12
Dakar 11
Dearborn 11
Jinan 10
Pune 10
Southend 10
Tokyo 10
Dong Ket 9
Washington 9
Belo Horizonte 8
Brasília 8
Hangzhou 8
London 8
Ningbo 8
Shanghai 8
Den Haag 7
Hanoi 7
Jakarta 7
Munich 7
Rio de Janeiro 7
San Francisco 7
Sorocaba 7
Abuja 6
Atlanta 6
Brooklyn 6
Haiphong 6
Kunming 6
Warsaw 6
Baghdad 5
Guangzhou 5
Houston 5
Kocaeli 5
Milan 5
Redwood City 5
Stockholm 5
Ankara 4
Bremen 4
Curitiba 4
Dhaka 4
Florianópolis 4
Lappeenranta 4
Liberty Lake 4
Lima 4
Mumbai 4
Nuremberg 4
Quito 4
Secaucus 4
Taizhou 4
Bari 3
Brussels 3
Charlotte 3
Cotia 3
Denver 3
Guarulhos 3
Guayaquil 3
Totale 5.502
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Nome #
Toxicity evaluation of gold, silver and titanium dioxide nanoparticles in Artemia salina larvae. 142
Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation 115
B implanted at room temperature in crystalline Si: B defect formation and dissolution 112
A combined ion implantation/nanosecond laser irradiation approach towards Si nanostructures doping 111
Electrical activation and carrier compensation in si and mg implanted GaN by Scanning Capacitance Microscopy 111
B implanted at room temperature in crystalline Si: defect configuration and thermal evolution detected by ion beam lattice location analyses and simulation 110
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 109
Immobilization of nanomaterials in PMMA composites for photocatalytic removal of dyes, phenols and bacteria from water 108
C ion-implanted TiO2 thin film for photocatalytic applications 108
B IMPLANTED AT ROOM TEMPERATURE IN CRYSTALLINE SI: B DEFECT FORMATION AND DISSOLUTION 107
Cross section of the interaction between substitutional B and Si self-interstitials generated by ion beams 104
De-activation and clustering of B in Si at extremely high concentration 104
Mechanism of de-activation and clustering of B in Si at extremely high concentration 96
Radiation Damage Of Silicon 96
Activation and thermal stability of ultra-shallow B+- implants in Ge 95
Influence of microstructure on voids nucleation in nanoporous Ge 95
Formation and evolution of small B clusters in Si: Ion channeling study 90
Electrical activation and lattice location of B and Ga impurities implanted in Si 89
Photoactive layered nanocomposites obtained by direct transferring of anodic TiO2 nanotubes to commodity thermoplastics 89
Towards a laser fluence dependent nanostructuring of thin Au films on Si by nanosecond laser irradiation 87
Carrier mobility and strain effect in heavily doped p-type Si 87
Enhanced photocatalytic response of nanometric TiO2 wrapping Au nanoparticles for eco-friendly water applications 86
Nanostructuring in Ge by self-ion implantation 85
Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation 85
Low temperature B clustering formation, growth and dissolution 85
Amorphous-Crystalline interface evolution during Solid Phase Epitaxy Re-growth of SiGe films amorphized by ion implantation 84
Self-ion-induced nanostructures in Ge 84
A generalized quantitative interpretation of dark-field contrast for highly concentrated microsphere suspensions 84
Synthesis of TiO2 thin film with embedded Au nanoparticles. 84
Substitutional B in Si: accurate lattice parameter determination 83
Nanoscale manipulation of Ge nanowires by ion irradiation 82
Towards sub-micrometer high aspect ratio X-ray gratings by atomic layer deposition of iridium 82
High-level incorporation of antimony in germanium by laser annealing 81
Study of B clustering thermal behaviour by means of in situ High Resolution X-Ray Diffraction 80
Roughness evolution in the amorphous-crystalline interface during solid phase epitaxy of SiGe films 80
Electrical properties of B and Ga co-doped Si 80
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si 80
Annealing of Radiation Damage in Silicon 80
Nanoporous Ge electrode as a template for nano-sized (< 5 nm) Au aggregates 78
Amorphization of Si using Cluster Ions 78
Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride 77
Fluorine segregation and incorporation during solid phase epitaxy of Si 77
Fe ion-implanted TiO2 thin film for efficient visible-light photocatalysis 76
Strain effect on Carrier Mobility in Si highly doped with B and Ga 76
UV-black rutile TiO2: An antireflective photocatalytic nanostructure 76
High-temperature annealing of thin Au films on Si: Growth of SiO2 nanowires or Au dendritic nanostructures? 75
Correlation Between Structural and Sensing Properties of Carbon Nanotube-Based Devices 75
Room Temperature Boron Displacement in Crystalline Silicon induced by Proton Irradiation 75
Development of X-band accelerating structures for high gradients 74
Measuring fusion excitation functions with RIBs using the stacked target technique: Problems and possible solutions 74
Structural and optical properties of solid-state synthesized Au dendritic structures 74
TiO2-coated nanostructures for dye photo-degradation in water 73
Measuring fusion excitation functions with RIBs: A thorough analysis of the stacked target technique and the related problems 73
Development of Laboratory Grating-based X-ray Phase Contrast Microtomography for Improved Pathology 72
Boron lattice location in room temperature ion implanted Si crystal 71
Novel approach to the fabrication of Au/Silica core-shell nanostructures based on nanosecond laser irradiations of thin Au films on Si 70
Formation And Dissolution of B clusters in ion implanted material 70
ION BEAM MODIFICATION OF MATERIALS Proceedings of the 15th International Conference on Ion Beam Modification of Materials Taormina, Italy, September 18–22, 2006 69
Nanoporosity induced by ion implantation in deposited amorphous Ge thin films 69
Development of X-band accelerating structures for high gradients 67
Carrier concentration and mobility in B doped Si1-xGex 66
Lattice location and thermal evolution of small B complexes in crystalline Si 65
Nanoscale amorphization, bending and recrystallization in silicon nanowires 65
Fluorine incorporation during Si solid phase epitaxy 65
Impurities – Si interstitials interaction in Si doped with B or Ga during ion irradiation 64
Amorphization of Si using cluster ions 64
Sub-barrier radioactive ion beam investigations using an a novel methodology and analysis for the stacked target technique 63
Physical insight into the phenomenon of B clustering in Si at room temperature 62
Effect of isopropanol on gold assisted chemical etching of silicon microstructures 62
Effect of strain on the carrier mobility in heavily doped p-type Si 61
Physical insight into the phenomenon of B clustering in Si at room temperature 61
Influence of Biaxial Strain on Solid Phase Epitaxial Regrowth in Ion-Implanted Strained Si on Relaxed Si1-xGex and Strained Si1-xGex 60
Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy 60
Photocatalytical and antibacterial activity of TiO2 nanoparticles obtained by laser ablation in water 59
Optical Properties of Nanoporous Germanium Thin Films 59
Single-crystal TiO2 nanowires by seed assisted thermal oxidation of Ti foil: synthesis and photocatalytic properties 58
Structural and morphological characterization of molybdenum coatings for high gradient accelerating structures 58
Structural characterization and oxygen concentration profiling of Co/Si multilayer structure 58
PMMA/TiO2 nanotubes composites for photocatalytic removal of organic compounds and bacteria from water 58
Review of B diffusion: From diffusion to TED to cocktails and the role of F, C, … in a-Si/c:Si 56
Proceedings of the 15th International Conference on IOn Beam Modification of Materials (IBMM 2006) 55
High aspect ratio metal microcasting by hot embossing for X-ray optics fabrication 55
Self-assembly nanostructured gold for high aspect ratio silicon microstructures by metal assisted chemical etching 55
High aspect ratio silicon structures by displacement Talbot lithography and Bosch etching 55
Group III impurities - Si interstitials interaction caused by ion irradiation 55
Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy 54
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films 53
p-type conduction in ion-implanted amorphized Ge 53
Group III impurities - Si interstitials interaction during ion irradiation 52
TiO2 based nanotubes-polymer composite material, method for the preparation and uses thereof 52
Heavy residue excitation functions for the collisions 6,7Li+64Zn around the Coulomb Barrier 52
Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride 51
Role of Si self-interstitials on the electrical de-activation of B doped Si 51
Influence of point defects injection on the stability of supersaturated Ga-Si solid solution 51
Hot embossing of Au- and Pb-based alloys for x-ray grating fabrication 51
TiO2 nanowires on Ti thin film for water purification 50
Molybdenum sputtering film characterization for high gradient accelerating structures 49
Nanoporous Ge coated by Au nanoparticles for electrochemical application 48
Group III impurities – Si interstitials interaction caused by ion irradiation 47
Towards the fabrication of high-aspect-ratio silicon gratings by deep reactive ion etching 46
Totale 7.448
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Categoria #
all - tutte 30.489
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 30.489
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021476 0 0 0 6 181 29 78 3 42 8 86 43
2021/2022787 105 115 3 22 126 0 113 24 71 2 35 171
2022/20231.319 119 54 19 128 173 239 0 189 348 4 29 17
2023/2024516 44 41 21 30 28 106 6 32 0 69 88 51
2024/20252.246 106 356 122 80 517 254 32 123 148 198 130 180
2025/20261.410 293 162 817 138 0 0 0 0 0 0 0 0
Totale 7.824