IRIS
PRIOLO, Francesco
 Distribuzione geografica
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Continente #
NA - Nord America 8.945
EU - Europa 5.215
AS - Asia 1.609
AF - Africa 125
Continente sconosciuto - Info sul continente non disponibili 13
OC - Oceania 7
SA - Sud America 2
Totale 15.916
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Nazione #
US - Stati Uniti d'America 8.410
UA - Ucraina 1.650
IE - Irlanda 1.623
CN - Cina 1.500
IT - Italia 682
CA - Canada 532
RU - Federazione Russa 412
SE - Svezia 390
DE - Germania 100
SN - Senegal 68
GB - Regno Unito 61
FR - Francia 54
CH - Svizzera 53
CI - Costa d'Avorio 52
AT - Austria 34
FI - Finlandia 34
NL - Olanda 32
GR - Grecia 27
IN - India 24
LB - Libano 15
PL - Polonia 15
SG - Singapore 14
UZ - Uzbekistan 14
EU - Europa 13
CZ - Repubblica Ceca 11
VN - Vietnam 10
BE - Belgio 9
BG - Bulgaria 8
TR - Turchia 8
AU - Australia 5
JP - Giappone 5
RO - Romania 5
NG - Nigeria 4
IL - Israele 3
LU - Lussemburgo 3
PK - Pakistan 3
ES - Italia 2
HK - Hong Kong 2
HR - Croazia 2
IR - Iran 2
KR - Corea 2
NZ - Nuova Zelanda 2
OM - Oman 2
PT - Portogallo 2
AE - Emirati Arabi Uniti 1
AR - Argentina 1
BO - Bolivia 1
DK - Danimarca 1
HU - Ungheria 1
ID - Indonesia 1
KZ - Kazakistan 1
LK - Sri Lanka 1
MA - Marocco 1
MD - Moldavia 1
MK - Macedonia 1
MS - Montserrat 1
MX - Messico 1
NO - Norvegia 1
PR - Porto Rico 1
RS - Serbia 1
TW - Taiwan 1
Totale 15.916
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Città #
Jacksonville 2.028
Chandler 1.777
Dublin 1.620
Nanjing 518
Lawrence 453
Cambridge 450
Andover 446
Toronto 435
Catania 380
Ashburn 340
Boardman 308
Des Moines 247
Houston 227
San Mateo 221
Nanchang 182
Wilmington 179
Shenyang 154
Hebei 132
Saint Petersburg 103
Jiaxing 96
Changsha 90
Ottawa 90
Tianjin 87
Dakar 68
Abidjan 52
Bremen 45
Moscow 40
Hangzhou 34
Norwalk 31
Washington 30
Jinan 28
Seattle 25
Falls Church 24
Liberty Lake 24
Kunming 23
Helsinki 22
Den Haag 21
Pune 20
Chieti 19
Zhengzhou 18
Los Angeles 16
Ningbo 15
Ann Arbor 14
Beijing 14
Milan 13
Lappeenranta 12
Palermo 12
Frankfurt Am Main 11
Guangzhou 10
Hanover 10
Taizhou 10
Dearborn 9
Dong Ket 9
Lanzhou 9
Edinburgh 8
Lastra a Signa 8
Brussels 7
Fuzhou 7
Ludwigshafen 7
Rome 7
San Giovanni la Punta 7
Amsterdam 6
Enna 6
Providence 6
Changchun 5
Gela 5
Kocaeli 5
Lausanne 5
Messina 5
Montreal 5
Padova 5
Princeton 5
San Leandro 5
Abuja 4
Fairfield 4
Redwood City 4
Southend 4
Tappahannock 4
Vienna 4
Avola 3
Bengaluru 3
Grafing 3
Kyiv 3
Melbourne 3
Mountain View 3
Nanto 3
Nuremberg 3
Phoenix 3
Stockholm 3
Aci Sant'Antonio 2
Agrigento 2
Barlassina 2
Boston 2
Bresso 2
Carlentini 2
Central 2
Chicago 2
Cisano Bergamasco 2
Faisalabad 2
Florence 2
Totale 11.441
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Nome #
THE EFFECTS OF OXYGEN AND DEFECTS ON THE DEEP-LEVEL PROPERTIES OF ER IN CRYSTALLINE SI 155
Ge+ ion implantation - A competing technology? 90
B Activation Enhancement in Submicron Confined Implants in Si 74
A monolithic silicon detector telescope 68
Mechanism and kinetics of the ion-assisted nucleation in amorphous silicon 65
A Novel Silicon Platform for Selective Isolation, Quantification, and Molecular Analysis of Small Extracellular Vesicles 64
REDUCTION OF SECONDARY DEFECT DENSITY BY C-IMPLANT AND B-IMPLANT IN GEXSI1-X LAYERS FORMED BY HIGH-DOSE GE IMPLANTATION IN (100) SI 62
Light-emitting silicon nanowires obtained by metal-assisted chemical etching 59
Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide 59
ROOM-TEMPERATURE LIGHT-EMITTING SILICON DIODES FABRICATED BY ERBIUM ION-IMPLANTATION 58
INFLUENCE OF A THIN INTERFACIAL OXIDE LAYER ON THE ION-BEAM ASSISTED EPITAXIAL CRYSTALLIZATION OF DEPOSITED SI 57
Decoration of silicon nanowires with silver nanoparticles for ultrasensitive surface enhanced Raman scattering 57
Coherent backscattering of Raman light 57
Changing the flux flow state in weak pinning superconducting films 56
Photonic Crystal Silicon Nanocluster Light Emitting Device 56
A room temperature light source based on silicon nanowires 56
High Resolution Scanning Capacitance Measurements of Si Devices 55
High intrinsic activity of the oxygen evolution reaction in low-cost NiO nanowall electrocatalysts 55
Concentration dependence of the Er3+ visible and infrared luminescence in Y2-xErxO3 thin films on Si 54
Acetone sensing and modelling by low-cost NiO nanowalls 54
Electrical Behavior of Ultra-Low-Energy Implanted Boron in Silicon; 53
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 53
Advances in Silicon Nanophotonics 53
Evidence for a “dark exciton” state of PbS nanocrystals in a silicate glass 53
Amorphization and recrystallization of ion implanted Si nanocrystals probed through their luminescence properties 53
Silicon nanowires: synthesis, optical properties and applications 52
2 MeV Si ion implantation damage in relaxed Si1-xGex 52
Enhanced sensitivity in non-enzymatic glucose detection by improved growth kinetics of Ni-based nanostructures 52
Ultrasensitive Label- and PCR-Free Genome Detection Based on Cooperative Hybridization of Silicon Nanowires Optical Biosensors 52
Ni(OH)2@Ni core-shell nanochains as low-cost high-rate performance electrode for energy storage applications 52
Modeling and Perspectives of the Si Nanocrystals-Erbium Interaction for Optical Amplification 51
A Study of Current Stability in the Dissipative Flux Flow State of Superconducting Films 51
N-type doping of Ge by As implantation and excimer laser annealing 51
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 51
Low cost synthesis of silicon nanowires for photonic applications 51
Ion beam-induced bending of silicon nanowires 51
Ultrasensitive Electrochemical Impedance Detection of Mycoplasma agalactiae DNA by Low-Cost and Disposable Au-Decorated NiO Nanowall Electrodes 51
An Electron Paramagnetic Resonance and Photoluminescence Study of Erbium-Impurity Complexes in Crystalline Silicon 50
Substitutional B in Si: accurate lattice parameter determination 50
A METASTABLE NISI PHASE EPITAXIALLY GROWN ON (111) SILICON BY PULSED LASER QUENCHING 50
Two Dimensional Boron Diffusion by Scanning Capacitance Microscopy 49
Mechanism of Boron Diffusion in Amorphous Silicon 49
B clustering in amorphous Si 49
Growth of ferromagnetic nanoparticles in a diluted magnetic semiconductor obtained by Mn implantation on Ge single crystals 49
THE ERBIUM-IMPURITY INTERACTION AND ITS EFFECTS ON THE 1.54 MU-M LUMINESCENCE OF ER3+ IN CRYSTALLINE SILICON 49
Dissolution kinetics of boron-interstitial clusters in silicon 49
Magneto-optical investigation of high temperature ion implanted MnxGe1-x alloy: evidence for multiple contributions to the magnetic response 49
CONCENTRATION-DEPENDENCE AND INTERFACIAL INSTABILITIES DURING ION-BEAM ANNEALING OF ARSENIC-DOPED SILICON 49
Strongly enhanced light trapping in a two-dimensional silicon nanowire random fractal array 49
Plasma Processing of the Silicon Surface: A Novel Method to Reduce Transient Enhanced Diffusion 49
Hydrogen induced optically-active defects in silicon photonic nanocavities 49
Ultrathin Sb-implanted ZnO transparent electrodes synthesized by MOCVD liquid precursors. 49
Structure of Er Related Centers in Si 48
Point Defect Engineering in Preamorphized Silicon Implanted with Fluorine 48
Activation Annealing of Ultra-Low Energy Implanted Boron in Silicon: A Study Combining Experiment and Process Modelling 48
Electroluminescence at 1.54 um in Er-doped Si nanocluster-based devices 48
Experimental quantification of useful and parasitic absorption of light in plasmon-enhanced thin silicon films for solar cells application 48
Anomalous transport of Sb in laser irradiated Ge 48
Implant and characterization of highly concentrated Fe deep centers in InP 47
DEFECT EVOLUTION IN ION-IMPLANTED CRYSTALLINE SI PROBED BY IN-SITU CONDUCTIVITY MEASUREMENTS 47
Room temperature migration of boron in crystalline silicon 47
Al implantation in Ge: uphill diffusion, electrical activation and trapping 47
AL-O INTERACTIONS IN ION-IMPLANTED CRYSTALLINE SILICON 47
High Resistance Buried Layers by Fe MeV Implantation in n-type InP 47
Submicron confinement effect on electrical activation of B implanted in Si 47
New Generation of Ultrasensitive Label-Free Optical Si Nanowire-Based Biosensors 47
STRUCTURAL CHARACTERIZATION OF THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS 46
Effect of O : Er concentration ratio on the structural, electrical, and optical properties of Si : Er : O layers grown by molecular beam epitaxy 46
Highly spatially resolved structural and optical investigation of Bi nanoparticles in Y-Er disilicate thin films 46
Luminescence Properties of Si Nanocrystals Embedded in Optical Microcavities 46
Atomistic mechanism of boron diffusion in silicon 46
CONCENTRATION PROFILES AND ELECTRICAL CHARACTERIZATION OF HIGH-ENERGY PHOSPHORUS IMPLANTS IN (100) SILICON 46
Laser device based on silicon nanostructures 46
Annealing Behavior of High Temperature Implanted Fe-Impurities in n-InP 46
Direct structural evidences of Mn dilution in Ge 45
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 45
High-level incorporation of antimony in germanium by laser annealing 45
Kinetics of Si and Ge Nanowires Growth through Electron Beam Evaporation 45
Shape of Grain Size Distributions During Crystal Grain Nucleation in a-Si 45
PHENOMENOLOGICAL DESCRIPTION OF ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON 45
Electroluminescence properties of SiOx layers implanted with rare earth ions 45
RADIATION-ENHANCED DIFFUSION OF AU IN AMORPHOUS SI 45
Trap-limited migration of Si self-interstitials at room temperature 45
Quantum Confined Semiconductor Nanostructures 45
DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED AMORPHOUS-SILICON 45
Bismuth doping of silicon compatible thin films for telecommunications and visible light emitting devices 45
Silicon nanowires for photonics, photovoltaics and sensing 45
Enhanced Rare Earth Luminescence in Silicon Nanocrystals 44
Mechanisms for the activation of ion implanted Fe in InP 44
Electroluminescence of Silicon Nanocrystals in MOS Structures 44
Optical and structural properties of Er2O3 films grown by magnetron sputtering 44
Effect of O Implantation in Crystalline Ge 44
Incorporation of active Fe impurities in GaInP by high temperature ion implantation 44
TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI 44
Correlation between electroluminescence and structural properties of Si nanoclusters 44
Low cost fabrication of Si NWs/cui heterostructures 44
Dissolution kinetics of B clusters in crystalline Si 44
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 44
AMORPHOUS CRYSTAL SILICON INTERFACES - STRUCTURE AND MOVEMENT UNDER ION-BEAM IRRADIATION 44
Light amplification in silicon nanocrystals by pump and probe transmission measurements 43
Totale 5.119
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Categoria #
all - tutte 55.737
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.737
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201999 0 0 0 0 0 0 0 0 0 0 4 95
2019/20202.870 1.088 173 252 56 247 10 384 9 235 56 262 98
2020/20212.700 20 226 413 6 718 81 394 5 221 13 447 156
2021/20223.246 440 457 3 88 515 24 482 100 302 7 82 746
2022/20235.284 506 193 63 450 607 995 42 813 1.356 35 160 64
2023/2024986 130 161 101 131 67 183 27 106 10 66 4 0
Totale 16.501