IRIS
MUSCATO, Orazio
 Distribuzione geografica
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Continente #
NA - Nord America 4.418
AS - Asia 2.199
EU - Europa 2.180
SA - Sud America 396
AF - Africa 368
OC - Oceania 14
Continente sconosciuto - Info sul continente non disponibili 3
Totale 9.578
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Nazione #
US - Stati Uniti d'America 4.253
SG - Singapore 1.235
RU - Federazione Russa 774
CN - Cina 619
IE - Irlanda 358
BR - Brasile 338
IT - Italia 293
UA - Ucraina 277
FR - Francia 174
SN - Senegal 152
CI - Costa d'Avorio 145
CA - Canada 135
VN - Vietnam 124
SE - Svezia 72
KR - Corea 58
DE - Germania 55
GB - Regno Unito 49
FI - Finlandia 40
NG - Nigeria 38
HK - Hong Kong 21
IN - India 21
BD - Bangladesh 19
AR - Argentina 18
MX - Messico 18
TR - Turchia 16
CH - Svizzera 15
EC - Ecuador 15
PL - Polonia 15
UZ - Uzbekistan 15
AU - Australia 14
IQ - Iraq 14
NL - Olanda 13
PK - Pakistan 11
ZA - Sudafrica 11
JP - Giappone 10
ES - Italia 9
VE - Venezuela 8
JO - Giordania 6
LT - Lituania 6
AT - Austria 5
LB - Libano 5
MA - Marocco 5
PT - Portogallo 5
RO - Romania 5
AE - Emirati Arabi Uniti 4
CL - Cile 4
CO - Colombia 4
DZ - Algeria 4
HN - Honduras 4
JM - Giamaica 4
PE - Perù 4
SA - Arabia Saudita 4
BJ - Benin 3
CR - Costa Rica 3
EG - Egitto 3
EU - Europa 3
GR - Grecia 3
PH - Filippine 3
AM - Armenia 2
AO - Angola 2
AZ - Azerbaigian 2
BE - Belgio 2
BO - Bolivia 2
ID - Indonesia 2
LV - Lettonia 2
NP - Nepal 2
PY - Paraguay 2
RS - Serbia 2
TN - Tunisia 2
AF - Afghanistan, Repubblica islamica di 1
AL - Albania 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
CZ - Repubblica Ceca 1
EE - Estonia 1
GY - Guiana 1
HU - Ungheria 1
KE - Kenya 1
KG - Kirghizistan 1
KZ - Kazakistan 1
ML - Mali 1
MS - Montserrat 1
OM - Oman 1
PS - Palestinian Territory 1
TG - Togo 1
YE - Yemen 1
Totale 9.578
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Città #
Santa Clara 779
Singapore 739
Dallas 703
Chandler 468
Dublin 358
Jacksonville 351
Moscow 300
San Jose 277
Ashburn 177
Dakar 152
Abidjan 145
Boardman 132
Nanjing 123
Toronto 100
Andover 99
Lawrence 99
Cambridge 97
Lauterbourg 92
Catania 90
Hefei 82
Beijing 80
Los Angeles 59
Seoul 55
Des Moines 51
Chicago 50
Nanchang 44
San Francisco 41
Wilmington 41
Ho Chi Minh City 40
San Mateo 40
Helsinki 38
Civitanova Marche 37
Hanoi 32
Columbus 28
São Paulo 26
Saint Petersburg 25
Jiaxing 23
Bremen 22
Changsha 22
New York 22
Ottawa 22
Sant'Agata Li Battiati 22
Shenyang 21
Council Bluffs 20
Hebei 19
The Dalles 19
Hong Kong 18
Lagos 18
Tianjin 18
Messina 15
Abuja 14
Belpasso 13
Buffalo 13
Brooklyn 12
Palermo 11
Orem 10
Belo Horizonte 9
Curitiba 9
Guayaquil 9
Tokyo 9
Ann Arbor 8
Dong Ket 8
Frankfurt am Main 8
Jinan 8
London 8
Nuremberg 8
Denver 7
Hangzhou 7
Johannesburg 7
Rio de Janeiro 7
Amman 6
Brasília 6
Dhaka 6
Houston 6
Manchester 6
Melbourne 6
Mexico City 6
Ningbo 6
Noto 6
Phoenix 6
Port Harcourt 6
Rome 6
Warsaw 6
Washington 6
Avola 5
Betim 5
Canberra 5
Fortaleza 5
Guangzhou 5
Guarulhos 5
Montreal 5
Norwalk 5
Stockholm 5
Syracuse 5
Tashkent 5
Amsterdam 4
Atlanta 4
Buenos Aires 4
Chennai 4
Juiz de Fora 4
Totale 6.675
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Nome #
Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model 157
A class of stochastic algorithms for the Wigner equation 156
Eliciting cities points of interest from people movements and suggesting effective itineraries 142
A Hydrodynamic Model for Silicon Nanowires Based on the Maximum Entropy Principle 137
A statistical enhancement method for Direct Simulation Monte Carlo in semiconductor devices 137
Multi-agent architecture for point of interest detection and recommendation 137
Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model 134
A deterministic multicell solution to the coupled Boltzmann-Poisson system simulating the transients of a 2D-silicon MESFET 130
A hierarchy of hydrodynamic models for silicon carbide semiconductors 130
A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation 126
A critical approach with Monte Carlo verification to Maximum Entropy schemes for charge transport in semiconductors 125
A thermodynamical framework for hydrodynamical models of carrier transport in semiconductors 124
Electro-thermal behaviour of a sub-micron silicon diode 124
A Variance Reduction Scheme for Monte Carlo semiconductor simulations using the Pi2S2 Grid 124
A benchmark study of the Signed-particle Monte Carlo algorithm for the Wigner equation 121
An Energy Transport Model Describing Heat Generation and Conduction in Silicon Semiconductors 119
Suggesting just enough (un)crowded routes and destinations 119
An Extended Hydrodynamic model for a Bipolar Junction Transistor 118
An extended hydrodynamic model for silicon nano wires 116
Hydrodynamic modeling of electron transport in gated silicon nanowires transistors 116
Ballistic charge transport in a triple-gate silicon nanowire transistor 114
Advanced Statistical Methodologies for Tolerance Analysis in the Integrated Circuit Design 112
Coupled quantum-classical transport in silicon nanowires 111
A Probabilistic model for the Wigner transport equation, 111
Monte Carlo and hydrodynamic simulation of a one dimensional n(+)-n-n(+) silicon diode 110
An efficient heat generation rate evaluation with electrothermal Monte Carlo simulations 110
Advanced Statistical Methodologies for Tolerance Analysis in Analog Circuit Design 109
Thermal and electrical modeling of sub-micron silicon devices 108
Validation of an extended hydrodynamic model for a submicron npn bipolar junction transistor 107
Electrothermal Monte Carlo validation of a hydrodynamic model for sub-micron silicon devices 106
A stochastic algorithm without time discretization error for the Wigner equation 106
Analysis of the error in Direct Simulation Monte Carlo for submicrometric semiconductors using the Pi2S2 Grid Infrastructure 105
Extended hydrodynamic model for the coupled electron-phonon system in silicon semiconductors 105
Calibrationof a one dimensional hydrodynamic simulator with Monte Carlo data 105
Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations 104
A Variance Reduction Scheme for Monte Carlo semiconductor simulations using the Pi2S2 Grid 103
Shock structure in an ultrarelativistic gas 101
Criteria of local thermal equilibrium for silicon semiconductors 100
Hydrodynamical models for semiconductors 99
An improved hydrodynamic model describing heat generation and transport in silicon 96
Properties of the steady state distribution of electrons in semiconductors 96
Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires 96
Journal of Physics: Conference Series. Hydrodynamic modeling of electron transport in silicon quantum wires 96
An extended hydrodynamical model for silicon semiconductor devices 96
Testing hydrodynamical models on the characteristics of a one-dimensional submicrometer structure 95
Relaxation-time approximations to the Boltzmann equation for electron transport in bulk silicon 93
Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors 93
INTENSE RELATIVISTIC ELECTRON-BEAM STEADY FLOWS 93
Moment equations with Maximum Entropy closure for carrier transport in semiconductor devices: validation in bulk silicon 89
Hydrodynamic simulation of a n+ − n − n+ silicon nanowire 88
Hydrodynamic Model for Silicon Carbide Semiconductors including crystal heating 87
Hot electron distribution function for the Boltzmann equation with analytic bands 86
Analysis of Self-Heating Effects in Sub- Micron Silicon Devices with Electrothermal Monte Carlo Simulations 86
IMPROVED HYDRODYNAMICAL MODEL FOR CARRIER TRANSPORT IN SEMICONDUCTORS 85
Magnetofluiddynamical simple waves in special relativity 85
Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann-Poisson solver 84
Direct Simulation Monte Carlo for semiconductors 84
Optimized quantum drift diffusion model for a resonant tunneling diode 83
Hydrodynamic modeling of silicon quantum wires 83
Sobolev norm and carrier transport in semiconductor devices 82
Local equilibrium and off-equilibrium phenomena in silicon quantum wires 81
Electron-distribution function for the Boltzmann equation in semiconductors 80
Monte Carlo evaluation of the transport coefficients in a n+-n-n+ silicon diode 79
The Steady Boltzmann Transport Equation for Silicon Semiconductors: A Variational Formulation 78
Simulation of submicron silicon diodes with a non-parabolic hydrodynamical model based on the maximum entropy principle 78
ULTRARELATIVISTIC BOLTZMANN-EQUATION FOR A SIMPLE GAS 76
Local equilibrium and off-equilibrium thermoelectric effects in silicon semiconductors 76
Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations 75
Numerical study of the systematic error in Monte Carlo schemes for semiconductor 74
RELATIVISTIC MAGNETOACOUSTIC SIMPLE WAVE SOLUTIONS FOR A SYNGE GAS 73
Extended thermodynamics in silicon devices 73
The Onsager Reciprocity Principle as a check of consistency for semiconductor carrier transport models 73
Hydrodynamic transport models for an ultra-thin base Si Bipolar Transistor 72
BGK model for simulating electron transport in semiconductor devices 72
Wigner Monte Carlo simulation without discretization error of the tunneling rectangular barrier 72
Monte Carlo quantum simulation of a resonant tunneling heterostructure for thermionic cooling 71
Heat generation in silicon nanometric semiconductor devices 71
Modeling heat generation in a submicrometric n+ - n - n+ silicon diode 71
Properties of the steady state distribution of electrons in semiconductors 70
Monte Carlo simulations of submicrometric devices 70
Shock structure in massless gases 69
Time step truncation in Direct Simulation Monte Carlo for semiconductors 69
Thermoelectric effects in silicon quantum wires 68
Controlled random search algorithm for global optimization with distributed processes on multivendor CPUs 67
Investigation of Self-Heating Effects in Submicrometer silicon diode 67
Kinetic relaxation models for the Boltzmann Transport Equation for silicon semiconductors 67
Seebeck Effect in Silicon Semiconductors 67
BREAKING OF RELATIVISTIC SIMPLE WAVES 67
Electrothermal Monte Carlo Simulation of a GaAs Resonant Tunneling Diode 66
Numerical study of the systematic error in Monte Carlo schemes for semiconductors 66
Numerical study of the systematic error in Monte Carlo schemes for semiconductors - WIAS Berlin - ISSN 0946-8633 66
Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors 65
Comparison of Monte Carlo and deterministic simulations of a silicon diode 65
Journal of Physics: Conference Series. Efficient Monte Carlo-based algorithms for the Wigner transport equation 65
Simulazioni deterministiche e stocastiche di dispositivi a semiconduttore 64
Electron transport in silicon nanowires having different cross-sections 64
Monte Carlo verification of an Extended hydrodynamic model describing charge carrier transport in semiconductors 64
Hydrodynamic modeling of an ultra-thin base silicon bipolar transistor 63
SMALL LARMOR RADIUS LIMIT FOR A WARM RELATIVISTIC ELECTRON FLUID 63
On the existence of high-energy tails for the Boltzmann transport equation in semiconductors 61
Totale 9.292
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Categoria #
all - tutte 32.367
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.367
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022776 91 102 0 13 102 0 108 21 56 0 29 254
2022/20231.358 121 68 27 134 103 227 2 316 297 11 39 13
2023/2024532 28 41 18 25 19 113 3 6 4 119 98 58
2024/20252.132 50 227 105 63 558 329 96 77 141 176 146 164
2025/20263.655 204 163 747 116 693 812 493 55 111 140 68 53
2026/20271 1 0 0 0 0 0 0 0 0 0 0 0
Totale 9.725