IRIS
ROMANO, Vittorio
 Distribuzione geografica
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Continente #
NA - Nord America 2064
EU - Europa 1387
AS - Asia 391
AF - Africa 66
OC - Oceania 6
SA - Sud America 3
Continente sconosciuto - Info sul continente non disponibili 2
Totale 3919
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Nazione #
US - Stati Uniti d'America 1921
IE - Irlanda 497
UA - Ucraina 413
CN - Cina 358
IT - Italia 159
CA - Canada 140
RU - Federazione Russa 113
SE - Svezia 80
SN - Senegal 62
DE - Germania 42
GB - Regno Unito 18
CH - Svizzera 15
VN - Vietnam 10
FR - Francia 9
PL - Polonia 9
GR - Grecia 6
AU - Australia 5
UZ - Uzbekistan 5
BG - Bulgaria 4
LB - Libano 4
AT - Austria 3
BE - Belgio 3
ES - Italia 3
NL - Olanda 3
TR - Turchia 3
AE - Emirati Arabi Uniti 2
BR - Brasile 2
DK - Danimarca 2
EG - Egitto 2
EU - Europa 2
JP - Giappone 2
SG - Singapore 2
AL - Albania 1
AZ - Azerbaigian 1
BO - Bolivia 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
HK - Hong Kong 1
HR - Croazia 1
ID - Indonesia 1
LU - Lussemburgo 1
MS - Montserrat 1
MX - Messico 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
RO - Romania 1
RS - Serbia 1
SA - Arabia Saudita 1
SI - Slovenia 1
ZA - Sudafrica 1
Totale 3919
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Città #
Chandler 557
Dublin 497
Jacksonville 446
Nanjing 123
Cambridge 119
Lawrence 119
Andover 116
Toronto 110
Catania 90
San Mateo 67
Dakar 62
Wilmington 52
Des Moines 50
Boardman 46
Nanchang 46
Saint Petersburg 38
Hebei 37
Shenyang 35
Ashburn 26
Ottawa 26
Jiaxing 24
Tianjin 23
Bremen 22
Changsha 18
San Francisco 16
Kunming 11
Dong Ket 10
Centro 9
Liberty Lake 7
Zhengzhou 7
Hangzhou 6
Jinan 6
Moscow 6
Norwalk 6
Scafati 5
Ann Arbor 4
Favara 4
Houston 4
Ningbo 4
Taizhou 4
Bottrop 3
Brussels 3
Changchun 3
Den Haag 3
Falls Church 3
Florence 3
Frankfurt Am Main 3
Kiev 3
Melbourne 3
Novosibirsk 3
Siracusa 3
Cairo 2
Cinisello Balsamo 2
Columbus 2
Copenhagen 2
Dubai 2
Guangzhou 2
Los Angeles 2
Madrid 2
Markham 2
Messina 2
Monmouth Junction 2
Montreal 2
Rome 2
San Severo 2
Singapore 2
Sofia 2
São Paulo 2
Véry 2
Augusta 1
Belgrade 1
Castle Hill 1
Central 1
Centurion 1
Civitavecchia 1
College Station 1
Fuzhou 1
Hanover 1
Huntington 1
Leawood 1
Lisbon 1
Ljubljana 1
London 1
Luxembourg 1
Manfredonia 1
Mascalucia 1
Mexico City 1
Mountain View 1
New York 1
Nicosia 1
Oklahoma City 1
Phoenix 1
Princeton 1
Qingdao 1
Reston 1
Riposto 1
Riyadh 1
Scicli 1
Scordia 1
Secaucus 1
Totale 2958
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Nome #
A Hydrodynamical Model for Holes in Silicon Semiconductors: the case of parabolic warped bands 55
Central schemes for balance laws of relaxation type 54
2D simulation of a silicon MESFET with a non-parabolic hydrodynamical model based on the maximum entropy principle 53
Asymptotic waves in the hydrodynamical model of semiconductors based on Extended Thermodynamics 51
Approximate solutions to the quantum drift-diffusion model of semiconductors 48
Asymptotic waves for the hydrodynamical model of semiconductors 48
A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands 48
The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands 47
DSMC method consistent with the Pauli exclusion principle and comparison with deterministic solutions for charge transport in graphene 47
Shock wave stability in relativistic radiation hydrodynamics 46
2DEG-3DEG charge transport model for MOSFET based on the Maximum Entropy Principle 46
Charge transport and mobility in monolayer graphene 46
Hydrodynamical modeling of charge transport in semiconductors 46
Global existence for the ballistic diode problem for the system of the macroscopic balance equations of charge transport in semiconductors 45
2d numerical simulations of an electron–phonon hydrodynamical model based on the maximum entropy principle 44
A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle 44
Hydrodynamical Model for Charge Transport in Graphene 44
EXACT MAXIMUM ENTROPY CLOSURE OF THE HYDRODYNAMICAL MODEL FOR SI SEMICONDUCTORS: THE 8-MOMENT CASE 44
MEP parabolic hydrodynamical models for holes in Silicon semiconductors 44
High-Field Mobility in Graphene on Substrate with a Proper Inclusion of the Pauli Exclusion Principle 44
Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method 44
Jump conditions for a radiating relativistic gas 43
Improved mobility models for charge transport in graphene 43
Monte Carlo analysis of thermal effects in monolayer graphen 42
Electron-phonon hydrodynamical model for semiconductors 42
Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices 41
Symmetry analysis and exact solutions for the drift-diffusion model of semiconductors 41
Hydrodynamic subband model for semiconductors based on the maximum entropy principle 41
2D numerical simulation of the MEP energy-transprot model with a finite difference scheme 41
Maximum Entropy Principle in Relativistic Radiation Hydrodynamics 40
Existence and uniqueness for a two-temperature energy-transport model for semiconductors 40
An Immunological Algorithm for Doping Profile Optimization in Semiconductors Design 40
2D Numerical simulation of the MEP energy-transport model with a mixed finite elemnt scheme 40
Application of weak equivalence transformations to a drift-diffusion model 40
Simulation of Gunn oscillations with a non-parabolic hydrodynamical model based on the maximum entropy principle 40
Numerical solutions for hydrodynamical models of semiconductors 39
Numerical simulation of coupled electron devices and circuits by the MEP hydrodynamical model for semiconductors with crystal heating 39
Multi-objective optimization and analysis for the design space exploration of analog circuits and solar cells 39
Enhancing quantum efficiency of thin-film silicon solar cells by Pareto optimality 39
Covariant flux-limited diffusion theory in Bianchi cosmologies 38
Simulation of electron-phonon coupling and heating dynamics in suspended monolayer graphene including all the phonon branches 38
A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation 38
Some mathematical properties of radiating gas model obtained with a variable Eddington factor 38
Discontinuous Galerkin approach for the simulation of charge transport in graphene 38
Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle 37
Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors 37
Moment equations with Maximum Entropy closure for carrier transport in semiconductor devices: validation in bulk silicon 37
Si and GaAs mobility derived from a a hydrodynamical model for semiconductors based on the maximum entropy principle 37
Nonlinear exact closure for the hydrodynamical model of semiconducotrs based on the maximum entropy principle 36
Extended Hydrodynamical Model of Carrier Transport in Semiconductors 35
Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle 35
Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors 35
Asymptotic stability of the solutions of the hydrodynamical model of semiconductors based on the maximum entropy principle: the case of bulk silicon 35
MATHEMATICAL STRUCTURE OF THE TRANSPORT EQUATIONS FOR COUPLED 2D-3D ELECTRON GASSES IN A MOSFET. 35
Semiconductor Device Design using Bimads Algorithm 34
Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors 34
Stability of the equilibrium state for a hydrodynamical model of charge transport in semiconductors 34
Doping profile optimization in semiconductor design 34
A Hydrodynamic Model for Covalent Semiconductors with Applications to GaN and SiC 34
Comparing linear and nonlinear hydrodynamical models for charge transport in graphene based on the Maximum Entropy Principle 34
Exact invariant solutions for a class of energy-transport models of semiconductors in the two dimensional stationary case 34
A full coupled drift-diffusion-Poisson simulation of a GFET 34
PDAE Modeling and Discretization [Chapter 2] 33
Deterministic solutions of the Boltzmann equation for charge transport in graphene on substrates. 33
Central schemes for balance laws of relaxation type 33
Recent development in Hydrodynamical modeling of semiconductors 33
Charge Transport in graphene including thermal effetcs 32
Simulation of charge transport in graphene nano-ribbons with a model based on MEP 32
Simulation of submicron silicon diodes with a non-parabolic hydrodynamical model based on the maximum entropy principle 32
An Euler-Poisson model based on MEP for holes in semiconductors 31
Cross validation of discontinuous Galerkin method and Monte Carlo simulations of charge transport in graphene on substrate 31
Quantum corrected hydrodynamic models for charge transport in graphene 31
A Multi-Objective Clonal Selection Algorithm for Analog Circuit and Solar Cell Design 30
Flux-limited gauge-invariant approach to cosmological perturbations 30
Asymptotic stability of the equilibrium state for the hydrodynamicl model of charge transport in semiconductors based on the maximum entropy principle 30
Nonlinear models for silicon semiconductors 29
Cross-validation of numerical schemes for extended hydrodynamical models of semiconductors 29
Mathematical modelling of charge transport in graphene heterojunctions 29
Simulation of Coupled PDAEs: Dynamic Iteration and Multirate Simulation [Chapter 3] 28
Hydrodynamical model for GaAs semiconductors based on the maximum entropy principle with application to electron devices 28
Existence and uniqueness of asymptotic wave solutions for the hydrodynamical model of semiconductors 28
Simulation of Graphene Field Effect Transistors 28
Quantum energy-transport and drift-diffusion models for electron transport in graphene: an approach by the wigner function 28
Comparing kinetic and MEP model of charge transport in semiconductors 27
Comparing kinetic and hydrodynamical models for electron transport in monolayer graphene 27
Dissipative effects in Bianchi type-III cosmologies 27
Comparing Kinetic and MEP Model of Charge Transport in Graphene 27
Equilibrium wigner function for fermions and bosons in the case of a general energy dispersion relation 27
Multi-Objective Optimization of Doping Profile in Semiconductor Design 26
Extended hydrodynamical models for charge transport in Si 26
Hole Mobility in Silicon Semiconductors 26
Symmetry analysis for the quantum drift-diffusion model of semiconductors 26
NON PARABOLIC BAND TRANSPORT IN SEMICONDUCTORS: CLOSURE OF THE PRODUCTION TERMS 26
Exact solutions for the drift-diffusion model of semiconducoptrs via Lie symmetry analysis 25
Numerical simulation of a subband model based on the Maximum Entropy Principle 25
Mixed finite-element numerical simulation of a 2D silicon MOSFET with the non prabolic MEP energy-transport 25
Energy-transport model for silicon semiconductors derived from the non parabolic band hydrodynbamical model based on the maximum entropy principle 25
Numerical Solutions of the Spatially Homogeneous Boltzmann Equation for Electrons in n-Doped Graphene on a Substrate 25
Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node 25
Symmetry Analysis for the quantum drif-diffusion model of semiconductors 24
Totale 3616
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Categoria #
all - tutte 7415
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7415
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/20187 0000 00 00 2140
2018/2019202 00150 33107 141 10328
2019/2020651 24536500 503 6419 6977335
2020/2021660 466877 19220 772 6759241
2021/2022939 104125916 1373 13228 83026276
2022/20231538 1337635156 167271 2297 401000
Totale 4109